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    Impact of Water-Assisted Electrochemical Reactions on the OFF-State Degradation of AlGaN/GaN HEMTs 

    Type: Journal Paper
    Author : Feng Gao; Swee Ching Tan; del Alamo, Jesus /A/.; Thompson, Carl V.; Palacios, T.
    Publisher: IEEE
    Year: 2014

    Influence of AlN Passivation on Dynamic ON-Resistance and Electric Field Distribution in High-Voltage AlGaN/GaN-on-Si HEMTs 

    Type: Journal Paper
    Author : Zhikai Tang; Sen Huang; Xi Tang; Baikui Li; Chen, Kevin J.
    Publisher: IEEE
    Year: 2014

    Profiling of Channel-Hot-Carrier Stress-Induced Trap Distributions Along Channel and Gate Dielectric in High-<formula formulatype="inline"> <img src="/images/tex/348.gif" alt="k"> </formula> Gated MOSFETs by a Modified Charge Pumping Technique 

    Type: Journal Paper
    Author : Chun-Chang Lu; Kuei-Shu Chang-Liao; Che-Hao Tsao; Tien-Ko Wang; Hsueh-Chao Ko; Yao-Tung Hsu
    Publisher: IEEE
    Year: 2014

    Gate Technology Contributions to Collapse of Drain Current in AlGaN/GaN Schottky HEMT 

    Type: Journal Paper
    Author : Kawanago, T.; Kakushima, K.; Kataoka, Yasuyuki; Nishiyama, A.; Sugii, Nobuyuki; Wakabayashi, H.; Tsutsui, K.; Natori, K.; Iwai, Hisato
    Publisher: IEEE
    Year: 2014

    A greedy approach combined with graph coloring for non-uniform beam layouts under antenna constraints in multibeam satellite systems 

    Type: Conference Paper
    Author : Camino, J.-T.; Mourgues, S.; Artigues, C.; Houssin, L.
    Publisher: IEEE
    Year: 2014

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