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Now showing items 1-9 of 9

Improved Channel Hot-Carrier Reliability in <formula formulatype="inline"> <img src="/images/tex/387.gif" alt="p"> </formula>-FinFETs With Replacement Metal Gate by a Nitrogen Postdeposition Anneal Process

Type: Journal Paper

Author : Moonju Cho; Arimura, H.; Jae Woo Lee; Kaczer, Ben; Veloso, A.; Boccardi, Guillaume; Ragnarsson, Lars-Ake; Kauerauf, T.; Horiguchi, Naoto; Groeseneken, Guido

Publisher: IEEE

Year: 2014

Optimal Measurement Allocation Algorithms for Parametric Model Identification of Power Systems

Type: Journal Paper

Author : Chakrabortty, Aranya; Martin, Clyde F.

Publisher: IEEE

Year: 2014

Combining SAR tomography and a PSI approach for highresolution 3-D imaging of an urban area

Type: Conference Paper

Publisher: IEEE

Year: 2014

Fiber Ring With Long Delay Used as a Cavity Mirror for Narrowing Fiber Laser

Type: Journal Paper

Author : Zhengqing Pan; Qing Ye; Haiwen Cai; Ronghui Qu; Zujie Fang

Publisher: IEEE

Year: 2014

A Load-Based Approach for Selecting the Backbone Terminals for a Hierarchical Ad Hoc Network

Type: Conference Paper

Author : Hazarika, Raihan; Russell, Harlan B.

Publisher: IEEE

Year: 2014

15 W Single Frequency Optically Pumped Semiconductor Laser With Sub-Megahertz Linewidth

Type: Journal Paper

Author : Laurain, Alexandre; Mart, Cody; Hader, J.; Moloney, Jerome V.; Kunert, Bernardette; Stolz, Wolfgang

Publisher: IEEE

Year: 2014

A global review of end user needs: Establishing the need for adaptable cookstoves

Type: Conference Paper

Author : Thacker, Kendall S.; Barger, McCall; Mattson, Christopher A.

Publisher: IEEE

Year: 2014

Instability of Indium Zinc Oxide Thin-Film Transistors Under Transmission Line Pulsed Stress

Type: Journal Paper

Author : Yuan Liu; Wei-Jing Wu; Zhi-Feng Lei; Lei Wang; Qian Shi; Yu-Rong Liu; Yun-Fei En; Bin Li

Publisher: IEEE

Year: 2014

Improved Performance of Amorphous InGaZnO Thin-Film Transistor With <inline-formula> <img src="/images/tex/17308.gif" alt="\\hbox {Ta}_{2}\\hbox {O}_{5}"> </inline-formula> Gate Dielectric by Using La Incorporation

Type: Journal Paper

Author : Qian, L.X.; Liu, X.Z.; Han, C.Y.; Lai, P.T.

Publisher: IEEE

Year: 2014

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Improved Channel Hot-Carrier Reliability in <formula formulatype="inline"> <img src="/images/tex/387.gif" alt="p"> </formula>-FinFETs With Replacement Metal Gate by a Nitrogen Postdeposition Anneal Process

Optimal Measurement Allocation Algorithms for Parametric Model Identification of Power Systems

Combining SAR tomography and a PSI approach for highresolution 3-D imaging of an urban area

Fiber Ring With Long Delay Used as a Cavity Mirror for Narrowing Fiber Laser

A Load-Based Approach for Selecting the Backbone Terminals for a Hierarchical Ad Hoc Network

15 W Single Frequency Optically Pumped Semiconductor Laser With Sub-Megahertz Linewidth

A global review of end user needs: Establishing the need for adaptable cookstoves

Instability of Indium Zinc Oxide Thin-Film Transistors Under Transmission Line Pulsed Stress

Improved Performance of Amorphous InGaZnO Thin-Film Transistor With <inline-formula> <img src="/images/tex/17308.gif" alt="\\hbox {Ta}_{2}\\hbox {O}_{5}"> </inline-formula> Gate Dielectric by Using La Incorporation

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Improved Channel Hot-Carrier Reliability in <formula formulatype="inline"> <img src="/images/tex/387.gif" alt="p"> </formula>-FinFETs With Replacement Metal Gate by a Nitrogen Postdeposition Anneal Process

Optimal Measurement Allocation Algorithms for Parametric Model Identification of Power Systems

Combining SAR tomography and a PSI approach for highresolution 3-D imaging of an urban area

Fiber Ring With Long Delay Used as a Cavity Mirror for Narrowing Fiber Laser

A Load-Based Approach for Selecting the Backbone Terminals for a Hierarchical Ad Hoc Network

15 W Single Frequency Optically Pumped Semiconductor Laser With Sub-Megahertz Linewidth

A global review of end user needs: Establishing the need for adaptable cookstoves

Instability of Indium Zinc Oxide Thin-Film Transistors Under Transmission Line Pulsed Stress

Improved Performance of Amorphous InGaZnO Thin-Film Transistor With <inline-formula> <img src="/images/tex/17308.gif" alt="\\hbox {Ta}_{2}\\hbox {O}_{5}"> </inline-formula> Gate Dielectric by Using La Incorporation