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Mobility Improvement Study for 8-Å-EOT HfO2 UTBB-FD-SOI MOSFET Based on the Direct Extraction of the Back-Channel Mobility

Type: Journal Paper

Author : Trojman, Lionel; Ragnarsson, Lars-Ake; Collaert, Nadine

Publisher: IEEE

Year: 2014

A Four-FET Method for Extracting Mobility in FETs Without Field Oxide

Type: Journal Paper

Author : Majumdar, Angshul; Ko-Tao Lee; Cheng-Wei Cheng; Kuen-Ting Shiu; Sadana, Devendra K.; Leobandung, Effendi

Publisher: IEEE

Year: 2014

Improved Thermal Performance of SOI Using a Compound Buried Layer

Type: Journal Paper

Author : Baine, P.; Montgomery, John H.; Armstrong, B. Mervyn; Gamble, Harold S.; Harrington, Sarah J.; Nigrin, Sydney; Wilson, Richard; Oo, Kean B.; Armstrong, Alastair G.; Suder, Suli

Publisher: IEEE

Year: 2014

Virtual device for recovering the hand functions

Type: Conference Paper

Author : Paulet, Marius Valerian; Neacsu, Oana Maria; Salceanu, Alexandru

Publisher: IEEE

Year: 2014

ALD TiN Barrier Metal for pMOS Devices With a Chemical Oxide Interfacial Layer for 20-nm Technology Node

Type: Journal Paper

Author : Ying-Tsung Chen; Chien-Ting Lin; Wen-Tai Chiang; Mon-Sen Lin; Chih-Wei Yang; Jian-Cun Ke; Shoou-Jinn Chang

Publisher: IEEE

Year: 2014

GPU-Based Computing of Repeated Range Queries over Moving Objects

Type: Conference Paper

Publisher: IEEE

Year: 2014

3D software tool for reliability assessment based on three dimensional wiener process model considering big data on cloud computing

Type: Conference Paper

Author : Tamura, Y.; Yamada, S.

Publisher: IEEE

Year: 2014

Improved Electrical Characteristics of Ge MOS Devices With High Oxidation State in <inline-formula> <img src="/images/tex/21682.gif" alt="{\\rm HfGeO}_{\\rm x}"> </inline-formula> Interfacial Layer Formed by <italic>In Situ</italic> Desorption

Type: Journal Paper

Author : Chen-Chien Li; Kuei-Shu Chang-Liao; Li-Jung Liu; Tzu-Min Lee; Chung-Hao Fu; Ting-Ching Chen; Jen-Wei Cheng; Chun-Chang Lu; Tien-Ko Wang

Publisher: IEEE

Year: 2014

Investigation of LaAlO3/ZrO2/<italic>a</italic>-InGaZnO thin-film transistors using atmospheric pressure plasma jet

Type: Journal Paper

Author : Chien-Hung Wu; Hau-Yuan Huang; Shui-Jinn Wang; Kow-Ming Chang; Hsin-Yu Hsu

Publisher: IET

Year: 2014

An Ultralow EOT Ge MOS Device With Tetragonal HfO2 and High Quality Hf<italic>x</italic>Ge<italic>y</italic>O Interfacial Layer

Type: Journal Paper

Author : Chung-Hao Fu; Kuei-Shu Chang-Liao; Li-Jung Liu; Chen-Chien Li; Ting-Ching Chen; Jen-Wei Cheng; Chun-Chang Lu

Publisher: IEEE

Year: 2014

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Mobility Improvement Study for 8-Å-EOT HfO<sub>2</sub> UTBB-FD-SOI MOSFET Based on the Direct Extraction of the Back-Channel Mobility

A Four-FET Method for Extracting Mobility in FETs Without Field Oxide

Improved Thermal Performance of SOI Using a Compound Buried Layer

Virtual device for recovering the hand functions

ALD TiN Barrier Metal for pMOS Devices With a Chemical Oxide Interfacial Layer for 20-nm Technology Node

GPU-Based Computing of Repeated Range Queries over Moving Objects

3D software tool for reliability assessment based on three dimensional wiener process model considering big data on cloud computing

Improved Electrical Characteristics of Ge MOS Devices With High Oxidation State in <inline-formula> <img src="/images/tex/21682.gif" alt="{\\rm HfGeO}_{\\rm x}"> </inline-formula> Interfacial Layer Formed by <italic>In Situ</italic> Desorption

Investigation of LaAlO<sub>3</sub>/ZrO<sub>2</sub>/<italic>a</italic>-InGaZnO thin-film transistors using atmospheric pressure plasma jet

An Ultralow EOT Ge MOS Device With Tetragonal HfO<sub>2</sub> and High Quality Hf<sub><italic>x</italic></sub>Ge<sub><italic>y</italic></sub>O Interfacial Layer

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Mobility Improvement Study for 8-&#x00C5;-EOT HfO<sub>2</sub> UTBB-FD-SOI MOSFET Based on the Direct Extraction of the Back-Channel Mobility

A Four-FET Method for Extracting Mobility in FETs Without Field Oxide

Improved Thermal Performance of SOI Using a Compound Buried Layer

Virtual device for recovering the hand functions

ALD TiN Barrier Metal for pMOS Devices With a Chemical Oxide Interfacial Layer for 20-nm Technology Node

GPU-Based Computing of Repeated Range Queries over Moving Objects

3D software tool for reliability assessment based on three dimensional wiener process model considering big data on cloud computing

Improved Electrical Characteristics of Ge MOS Devices With High Oxidation State in <inline-formula> <img src="/images/tex/21682.gif" alt="{\\rm HfGeO}_{\\rm x}"> </inline-formula> Interfacial Layer Formed by <italic>In Situ</italic> Desorption

Investigation of LaAlO<sub>3</sub>/ZrO<sub>2</sub>/<italic>a</italic>-InGaZnO thin-film transistors using atmospheric pressure plasma jet

An Ultralow EOT Ge MOS Device With Tetragonal HfO<sub>2</sub> and High Quality Hf<sub><italic>x</italic></sub>Ge<sub><italic>y</italic></sub>O Interfacial Layer

Mobility Improvement Study for 8-Å-EOT HfO<sub>2</sub> UTBB-FD-SOI MOSFET Based on the Direct Extraction of the Back-Channel Mobility