Temperature and doping dependencies of electron mobility in InAs, AlAs and AlGaAs structures have been calculated using an ensemble Monte Carlo simulation...

mobility in GaN and InN are

calculated, by solving Boltzmann equation using iteration

model, as a function of temperature for carrier

concentrations of 1016, 1017, and 1018 cm-3. Both GaN and

InN ...

in this work the boltzmann transport equation is solved iteratively.

The electron mobility of ZnS and ZnSe semiconductor compounds were calculated by using the

iteration method. We considered polar optical phonon scattering, deformation potential acoustic,

piezoelectric and ionized impurity scattering...

Temperature and doping dependencies of electron mobility in InP, GaP and Ga0.52In0.48P structures have been calculated using an iteravive technique. The following scattering mechanisims, i.e, impurity, polar optical phonon, acoustic phonon...

Temperature and doping dependencies of electron mobility in InP, InAs,GaP and GaAs structures have been

calculated using an iterative technique. The following scattering mechanisms, i.e, impurity, polar optical phonon,

acoustic phonon...