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Now showing items 1-6 of 6

A Robust W-Shape-Buffer LIGBT Device With Large Current Capability

Type: Journal Paper

Author : Qinsong Qian; Siyang Liu; Weifeng Sun; Hao Wang; Chunwei Zhang

Publisher: IEEE

Year: 2014

Switching ruggedness and surge-current capability of diodes using the self-adjusting p emitter efficiency diode concept

Type: Journal Paper

Author : Basler, Thomas; Pfaffenlehner, Manfred; Felsl, Hans Peter; Niedernostheide, F.-J.; Pfirsch, F.; Schulze, H.-J.; Baburske, R.; Lutz, Josef

Publisher: IET

Year: 2014

On the Device Design and Drive-Current Capability of SOI Lateral Bipolar Transistors

Type: Journal Paper

Publisher: IEEE

Year: 2014

A 3600 V/80 A Series--Parallel-Connected Silicon Carbide MOSFETs Module With a Single External Gate Driver

Type: Journal Paper

Author : Xinke Wu; Shidong Cheng; Qiang Xiao; Kuang Sheng

Publisher: IEEE

Year: 2014

Technical program overview

Type: Conference Paper

Publisher: IEEE

Year: 2014

TC-LIGBTs on the Thin SoI Layer for the High Voltage Monolithic ICs With High Current Density and Latch-Up Immunity

Type: Journal Paper

Author : Jing Zhu; Weifeng Sun; Weinan Dai; Long Zhang; Shenli Lu; Longxi Shi; Yangbo Yi; Sen Zhang; Wei Su

Publisher: IEEE

Year: 2014

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A Robust W-Shape-Buffer LIGBT Device With Large Current Capability

Switching ruggedness and surge-current capability of diodes using the self-adjusting p emitter efficiency diode concept

On the Device Design and Drive-Current Capability of SOI Lateral Bipolar Transistors

A 3600 V/80 A Series--Parallel-Connected Silicon Carbide MOSFETs Module With a Single External Gate Driver

Technical program overview

TC-LIGBTs on the Thin SoI Layer for the High Voltage Monolithic ICs With High Current Density and Latch-Up Immunity

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A Robust W-Shape-Buffer LIGBT Device With Large Current Capability

Switching ruggedness and surge-current capability of diodes using the self-adjusting p emitter efficiency diode concept

On the Device Design and Drive-Current Capability of SOI Lateral Bipolar Transistors

A 3600 V/80 A Series--Parallel-Connected Silicon Carbide MOSFETs Module With a Single External Gate Driver

Technical program overview

TC-LIGBTs on the Thin SoI Layer for the High Voltage Monolithic ICs With High Current Density and Latch-Up Immunity