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RISAnalytical modeling of a p-n-i-n tunneling field effect transistor
is valid at edvia numerical results obtained from device simulations based on non-local band-to-band tunneling model...
A Novel Double Gate Tunnel Field Effect Transistor with 9 mV/dec Average Subthreshold Slope
In this paper, a novel double gate tunnel field effect transistor (DGTFET) configuration with p+-layer in the channel is proposed and investigated. The proposed structure is a Sichannel DGTFET, which has a p+-layer in the ...
Remote and centralized monitoring of PV power plants
Ferroelectric deep trench capacitors based on Al:HfO<inf>2</inf> for 3D nonvolatile memory applications
Design of tunneling field-effect transistor (TFET) with AlGaAs/InGaAs hetero-junction
In this paper a hetero-junction tunnel field effect transistor (HJ-TFET) with the channel length of 20 nm has been introduced and simulated in which the source/channel heterojunction is AlGaAs /InGaAs. With precise selection ...
Analysis and optimization of Tunnel FET with Band gap Engineering
in this paper a high performance double gate tunnel field effect transistor (DG-TFET) is proposed. Band gap engineering is achieved in order to improve the device performance. This novel TFET is formed from variable band ...