Search

Now showing items 1-3 of 3

The effect of barrier composition on quantum dot solar cell performance

Type: Conference Paper

Author : Forbes, D.V.; Yushuai Dai; Polly, S.J.; Hellstroem, S.; Bailey, C.; Hubbard, S.M.

Publisher: IEEE

Year: 2014

Single-Event Transient Response of InGaAs MOSFETs

Type: Journal Paper

Author : Kai Ni; En Xia Zhang; Hooten, N.C.; Bennett, W.G.; McCurdy, Michael W.; Sternberg, A.L.; Schrimpf, R.D.; Reed, R.A.; Fleetwood, D.M.; Alles, Michael L.; Tae-Woo Kim; Jianqiang Lin; del Alamo, Jesus /A/.

Publisher: IEEE

Year: 2014

Effect of Fringing Capacitances on the RF Performance of GaN HEMTs With T-Gates

Type: Journal Paper

Author : Bo Song; Sensale-Rodriguez, Berardi; Ronghua Wang; Jia Guo; Zongyang Hu; Yuanzheng Yue; Faria, Frederico; Schuette, Michael; Ketterson, Andrew; Beam, Edward; Saunier, Paul; Xiang Gao; Shiping Guo; Fay, Patrick; Jena, D.; Xing, Huili Grace

Publisher: IEEE

Year: 2014

Search

The effect of barrier composition on quantum dot solar cell performance

Single-Event Transient Response of InGaAs MOSFETs

Effect of Fringing Capacitances on the RF Performance of GaN HEMTs With T-Gates

Author

Publisher

Year

Keywords

Type

Language (ISO)

Content Type

Publication Title

Search

Filters

The effect of barrier composition on quantum dot solar cell performance

Single-Event Transient Response of InGaAs MOSFETs

Effect of Fringing Capacitances on the RF Performance of GaN HEMTs With T-Gates