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    The Effect of Gate Length on SOI-MOSFETs Based on ZnO Material 

    Type: Journal Paper
    Author : R. Khoshlahni; هادی عربشاهی; Hadi Arabshahi
    Year: 2011
    Abstract:



    fixed channel length, when the gate length is increased, the

    output drain current characteristics is decreased and

    therefore the transistor transconductance decreases.

    Moreover, with increasing the gate length, the effect of the...

    The Effect of Gate Length and Temperature on ZnO MOSFETs Operation 

    Type: Journal Paper
    Author : هادی عربشاهی; Hadi Arabshahi
    Year: 2010
    Abstract:

    is decreased, the output drain current is increased, and therefore the

    transistor transconductance increases. Moreover, with increasing temperature the drain current is

    reduced, which results in the reduced drain barrier lowering. The simulated...

    The Effect of Gate Length on SOI-MOSFETs Operation 

    Type: Journal Paper
    Author : Javad Baedi; هادی عربشاهی; Hadi Arabshahi
    Year: 2010
    Abstract:

    nm are simulated. Simulations show that with a

    fixed channel length, when the gate length is increased, the output drain current characteristics

    slope is increased, and therefore the transistor transconductance increases. Moreover, with...

    Holographic-type four-port optical circulator with a small-aperture Faraday rotator window 

    Type: Conference Paper
    Publisher: IEEE
    Year: 2014

    Predictive Analytics for Outpatient Appointments 

    Type: Conference Paper
    Author : Nang Laik Ma , Khataniar, S. , Dan Wu , Ng, S.S.Y.
    Publisher: IEEE
    Year: 2014

    On the catalyzing effect of randomness on the per-flow throughput in wireless networks 

    Type: Conference Paper
    Author : Ciucu, F. , Schmitt, J.
    Publisher: IEEE
    Year: 2014

    Experimental validation of adverse weather effects on a 240 GHz multi-gigabit wireless link 

    Type: Conference Paper
    Publisher: IEEE
    Year: 2014

    A Study of Gate Length and Source-Drain Bias on Electron Transport Properties in SiC Based MOSFETs Using Monte Carlo Method 

    Type: Journal Paper
    Author : هادی عربشاهی; Hadi Arabshahi
    Year: 2011
    Abstract:

    the gate length is

    decreased, the output drain current is increased, and therefore the transistor transconductance increases. Moreover, with

    increasing temperature the drain current is reduced, which results in the reduced drain barrier...

    A Programmable Ultra Low Power Analog Band-Pass Filter for Cochlear Implants 

    Type: Conference Paper
    Author : الناز ظفرخواه; محمد میمندی نژاد; Elnaz Zafarkhah; Mohammad Maymandi Nejad
    Year: 2014
    Abstract:

    Inthis article an ultra low power analog programmable band-pass filter for cochlear implants (CIs) is designed. In order to decreasethe power consumption, a subthresholdGm-Cstructure is used and also capacitiveattenuationtechnique ...

    The frequency Response and Effect of Trap parameters on The characteristics of GaN MESFETs 

    Type: Journal Paper
    Author : هادی عربشاهی; Hadi Arabshahi
    Year: 2008
    Abstract:

    of modulating the gate bias have also been studied to

    test the device respond and derive the frequency bandwidth. The maximum cut-off frequency

    and transconductance of a 0.3 μm gate-length GaN MESFET including trapping

    effects are calculated...

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