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RISInvestigation of the novel attributes in double recessed gate SiC MESFETs at drain side
Year: 2011
Abstract:
In this paper, the potential impact of drain side-double recessed gate (DS-DRG) on silicon
carbide (SiC)-based metal semiconductor field effect transistors (MESFETs) is studied. We
investigate the device performance focusing...
Effect of SiC on the percipitation hardening behaviour of A356-3% SiC composite
اثر افزودن ذرات SiC بر ییر سختی کامیوزیتA356-3% SiC
Year: 2005
Abstract:
Effect of SiC on the percipitation hardening behaviour of A356-3% SiC composite ( اثر افزودن ذرات SiC بر ییر سختی کامیوزیتA356-3% SiC )...