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An Oxygen Gettering Scheme for Improving Device Mobility and Subthreshold Swing of InGaZnO-Based Thin-Film Transistor

Type: Journal Paper

Author : Hsiao-Hsuan Hsu; Chun-Yen Chang; Chun-Hu Cheng; Shan-Haw Chiou; Chiung-Hui Huang; Yu-Chien Chiu

Publisher: IEEE

Year: 2014

The prediction of power distribution transformer faults frequency based on high-order Markov

Type: Conference Paper

Author : Baoping Zou; Zhongwei Wang; Yixin Chen; Hong Zhen; Dongdong Xu

Publisher: IEEE

Year: 2014

Two-Dimensional Numerical Simulation of Bottom-Gate and Dual-Gate Amorphous In-Ga-Zn-O MESFETs

Type: Journal Paper

Author : Chumin Zhao; Linsen Bie; Rui Zhang; Kanicki, J.

Publisher: IEEE

Year: 2014

The analysis of the integral cycle delay of the electronic transformer and the research on the detection technology

Type: Conference Paper

Author : Zhang, Jian; Duan, Meimei; Mu, Xiaoxing

Publisher: IEEE

Year: 2014

Nonvolatile Charge-Trap Memory Transistors With Top-Gate Structure Using In–Ga–Zn-O Active Channel and ZnO Charge-Trap Layer

Type: Journal Paper

Author : Jun Yong Bak; Min-Ki Ryu; Sang Hee Ko Park; Chi Sun Hwang; Sung Min Yoon

Publisher: IEEE

Year: 2014

An a-InGaZnO TFT Pixel Circuit Compensating Threshold Voltage and Mobility Variations in AMOLEDs

Type: Journal Paper

Author : Yongchan Kim; Kanicki, J.; Hojin Lee

Publisher: IEEE

Year: 2014

A 75mW 50Gbps SerDes transmitter with automatic serializing time window search in 65nm CMOS technology

Type: Conference Paper

Author : Ke Huang; Ziqiang Wang; Xuqiang Zheng; Chun Zhang; Zhihua Wang

Publisher: IEEE

Year: 2014

Effect of Temperature and Electric Field on Degradation in Amorphous InGaZnO TFTs Under Positive Gate and Drain Bias Stress

Type: Journal Paper

Author : Jong In Kim; In-Tak Cho; Sung-Min Joe; Chan-Yong Jeong; Daeun Lee; Hyuck-In Kwon; Sung Hun Jin; Jong-Ho Lee

Publisher: IEEE

Year: 2014

InGaZnO metal-base transistor with high current gain

Type: Journal Paper

Author : Huang, H.Y.; Wang, S.J.; Hung, C.H.; Wu, Cathy H.; Lin, W.C.

Publisher: IET

Year: 2014

Effects of Gate Dielectric and Process Treatments on the Electrical Characteristics of IGZO TFTs With Film Profile Engineering

Type: Journal Paper

Author : Bo-Shiuan Shie; Horng-Chih Lin; Rong-Jye Lyu; Tiao-Yuan Huang

Publisher: IEEE

Year: 2014

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An Oxygen Gettering Scheme for Improving Device Mobility and Subthreshold Swing of InGaZnO-Based Thin-Film Transistor

The prediction of power distribution transformer faults frequency based on high-order Markov

Two-Dimensional Numerical Simulation of Bottom-Gate and Dual-Gate Amorphous In-Ga-Zn-O MESFETs

The analysis of the integral cycle delay of the electronic transformer and the research on the detection technology

Nonvolatile Charge-Trap Memory Transistors With Top-Gate Structure Using In–Ga–Zn-O Active Channel and ZnO Charge-Trap Layer

An a-InGaZnO TFT Pixel Circuit Compensating Threshold Voltage and Mobility Variations in AMOLEDs

A 75mW 50Gbps SerDes transmitter with automatic serializing time window search in 65nm CMOS technology

Effect of Temperature and Electric Field on Degradation in Amorphous InGaZnO TFTs Under Positive Gate and Drain Bias Stress

InGaZnO metal-base transistor with high current gain

Effects of Gate Dielectric and Process Treatments on the Electrical Characteristics of IGZO TFTs With Film Profile Engineering

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An Oxygen Gettering Scheme for Improving Device Mobility and Subthreshold Swing of InGaZnO-Based Thin-Film Transistor

The prediction of power distribution transformer faults frequency based on high-order Markov

Two-Dimensional Numerical Simulation of Bottom-Gate and Dual-Gate Amorphous In-Ga-Zn-O MESFETs

The analysis of the integral cycle delay of the electronic transformer and the research on the detection technology

Nonvolatile Charge-Trap Memory Transistors With Top-Gate Structure Using In&#x2013;Ga&#x2013;Zn-O Active Channel and ZnO Charge-Trap Layer

An a-InGaZnO TFT Pixel Circuit Compensating Threshold Voltage and Mobility Variations in AMOLEDs

A 75mW 50Gbps SerDes transmitter with automatic serializing time window search in 65nm CMOS technology

Effect of Temperature and Electric Field on Degradation in Amorphous InGaZnO TFTs Under Positive Gate and Drain Bias Stress

InGaZnO metal-base transistor with high current gain

Effects of Gate Dielectric and Process Treatments on the Electrical Characteristics of IGZO TFTs With Film Profile Engineering

Nonvolatile Charge-Trap Memory Transistors With Top-Gate Structure Using In–Ga–Zn-O Active Channel and ZnO Charge-Trap Layer