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Time to failure analysis of single mode long-wavelength InGaAsP vertical-cavity surface emitting lasers
Year: 2014
Abstract:
Abstract— In this paper, we investigate the time to failure (tf) analysis of a Single Mode 1.55 µm InGaAsP vertical cavity surface emitting laser (VCSEL) with two different electrical confinement structures. The electrical confinement introduced...
The Effectof nonlinear gain and Thermal Carrier scape on Dynamic Characterisations of GaAs/InGaAs Self-Assembled quantom Dot Lasers
Year: 2011
Abstract:
The Effectof nonlinear gain and Thermal Carrier scape on Dynamic Characterisations of GaAs/InGaAs Self-Assembled quantom Dot Lasers...
InGaAs Gate-All-Around Nanowire Devices on 300mm Si Substrates
Publisher: IEEE
Year: 2014
Radio-Frequency Characterization of Selectively Regrown InGaAs Lateral Nanowire MOSFETs
Publisher: IEEE
Year: 2014
High-Photocurrent and Wide-Bandwidth UTC Photodiodes With Dipole-Doped Structure
Publisher: IEEE
Year: 2014
Overcoming the FDTD stability limit via model order reduction and eigenvalue perturbation
Publisher: IEEE
Year: 2014