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GaSb-InAs n-TFET With Doped Source Underlap Exhibiting Low Subthreshold Swing at Sub-10-nm Gate-Lengths
Publisher: IEEE
Year: 2014
An efficient protocol for geographically addressed streaming
Publisher: IEEE
Year: 2014
Large On-Current Enhancement in Hetero-Junction Tunnel-FETs via Molar Fraction Grading
Publisher: IEEE
Year: 2014