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RISA study of Dynamic Characterizations of GaAs/AlGaAs Self-Assembled Quantum Dot Laser
study of Dynamic Characterizations of GaAs/AlGaAs Self-Assembled Quantum Dot Laser...
The Effectof nonlinear gain and Thermal Carrier scape on Dynamic Characterisations of GaAs/InGaAs Self-Assembled quantom Dot Lasers
The Effectof nonlinear gain and Thermal Carrier scape on Dynamic Characterisations of GaAs/InGaAs Self-Assembled quantom Dot Lasers...
Thermal imaging of microwave power GaAs-FET with scanning thermal nanoprobe
into an atomic force scanning probe piezoresistive type cantilever. The novel thermal probe has a spatial resolution better than 80 nm and a thermal resolution of the order of 10-3 K. The measurements have been successfully performed on a 30 fingers GaAs...
Time to failure analysis of single mode long-wavelength InGaAsP vertical-cavity surface emitting lasers
Abstract— In this paper, we investigate the time to failure (tf) analysis of a Single Mode 1.55 µm InGaAsP vertical cavity surface emitting laser (VCSEL) with two different electrical confinement structures. The electrical confinement introduced...
Calculation of Electron Hall Mobility in GaSb, GaAs and GaN Using An Iterative Method
Electron hall mobility in GaSb, GaAs and GaN .......