Search

Now showing items 1-7 of 7

Synchronous Non-Volatile Logic Gate Design Based on Resistive Switching Memories

Type: Journal Paper

Author : Weisheng Zhao; Moreau, M.; Erya Deng; Yue Zhang; Portal, J.-M.; Klein, Jacques-Olivier; Bocquet, Michael; Aziza, H.; Deleruyelle, D.; Muller, Candice; Querlioz, Damien; Ben Romdhane, N.; Ravelosona, Dafine; Chappert, Claude

Publisher: IEEE

Year: 2014

A 16 Kb Spin-Transfer Torque Random Access Memory With Self-Enable Switching and Precharge Sensing Schemes

Type: Journal Paper

Author : Li Zhang; Weisheng Zhao; Yiqi Zhuang; Junlin Bao; Gefei Wang; Hualian Tang; Cong Li; Beilei Xu

Publisher: IEEE

Year: 2014

Network Traffic-Aware Virtual Machine Placement with Availability Guarantees Based on Shadows

Type: Conference Paper

Author : Qian Zhang , Mingyu Li , Xiaohui Hu

Publisher: IEEE

Year: 2014

Variation-Tolerant High-Reliability Sensing Scheme for Deep Submicrometer STT-MRAM

Type: Journal Paper

Author : Wang Kang; Zheng Li; Zhaohao Wang; Deng, Erya; Klein, Jacques-Olivier; Youguang Zhang; Chappert, Claude; Ravelosona, Dafine; Weisheng Zhao

Publisher: IEEE

Year: 2014

Variation-Tolerant and Disturbance-Free Sensing Circuit for Deep Nanometer STT-MRAM

Type: Journal Paper

Author : Wang Kang; Zheng Li; Klein, Jacques-Olivier; Yuanqing Chen; Youguang Zhang; Ravelosona, Dafine; Chappert, Claude; Weisheng Zhao

Publisher: IEEE

Year: 2014

An underactuated mechanical hand: A first prototype

Type: Conference Paper

Author : Niola, Vincenzo; Rossi, Cesare; Savino, Sergio; Troncone, Stefano

Publisher: IEEE

Year: 2014

[Copyright notice]

Type: Conference Paper

Publisher: IEEE

Year: 2014

Search

Synchronous Non-Volatile Logic Gate Design Based on Resistive Switching Memories

A 16 Kb Spin-Transfer Torque Random Access Memory With Self-Enable Switching and Precharge Sensing Schemes

Network Traffic-Aware Virtual Machine Placement with Availability Guarantees Based on Shadows

Variation-Tolerant High-Reliability Sensing Scheme for Deep Submicrometer STT-MRAM

Variation-Tolerant and Disturbance-Free Sensing Circuit for Deep Nanometer STT-MRAM

An underactuated mechanical hand: A first prototype

[Copyright notice]

Author

Publisher

Year

Keywords

Type

Language (ISO)

Content Type

Publication Title

Search

Filters

Synchronous Non-Volatile Logic Gate Design Based on Resistive Switching Memories

A 16 Kb Spin-Transfer Torque Random Access Memory With Self-Enable Switching and Precharge Sensing Schemes

Network Traffic-Aware Virtual Machine Placement with Availability Guarantees Based on Shadows

Variation-Tolerant High-Reliability Sensing Scheme for Deep Submicrometer STT-MRAM

Variation-Tolerant and Disturbance-Free Sensing Circuit for Deep Nanometer STT-MRAM

An underactuated mechanical hand: A first prototype

[Copyright notice]