Search
CSV
RISInfluence of Temperature in High Field Electron Transport Properties in Bulk Wurtzite GaN
are represented by non-parabolic ellipsoidal valleys
centred on important symmetry points of the Brillouin zone. The simulation shows that
intervalley electron transfer plays a dominant role in GaN in high electric fields leading to a...
Convergence of Green's function heat equation solutions in electronic nanostructures
A Study of Gate Length and Source-Drain Bias on Electron Transport Properties in SiC Based MOSFETs Using Monte Carlo Method
are represented
by non-parabolic ellipsoidal valleys centred on important symmetry points of the Brillouin zone. The following scattering
mechanisims, i.e, impurity, polar optical phonon, acoustic phonon, alloy and piezoelectric are inculded...
Comparison of electron transport properties in submicrometer ZnS and ZnO n+nn+ diode using ensemble Monte Carlo simulation
valleys are based on a three-valley model which are represented by
nonparabolic ellipsoidal valleys centered on the important symmetry point of the first Brillouin zone.
Our calculation shows that the saturation mean drift velocity...
ELECTRON TRANSPORT CHARACTERISTICS OF 6H-SIC AND 4H-SIC FOR HIGH TEMPERATURE DEVICE MODELING
of the Brillouin zone are fitted to the first-principles band structure. The electron drift velocity is calculated as a function of temperature and ionized donor concentration in the ranges of
300-600 K and 1016-1020 cm-3, respectively. Due to the freezout...
Steady-state and transient electron transport within bulk ternary nitride semiconductors including GaInN, AlGaN and AlInN using a three-valley Monte Carlo method
-parabolic
ellipsoidal valleys centered on important symmetry points of the Brillouin zone. For all materials it is found that electron
velocity overshoot only occurs when the electric field is increased to a value above a certain critical field, unique to...