Efficient Agile Sink Selection in Wireless Sensor Networks Based on Compressed Sensing
Publisher:
Year
: 2014DOI: 10.1109/ICSICT.2014.7021333
Keyword(s): elemental semiconductors,etching,germanium,junction gate field effect transistors,power field effect transistors,silicon-on-insulator,Ge-Si,JL pGAA FET,SOI,anisotropic etching,defect removal,high performance inversion,ion enhancement,junctionless gate-all-around FET structure,sidewall INV nFET,subthreshold characteristics,voltage -1 V,voltage -2 V,Abstracts,Field effect transistors,Germanium silicon alloys,Logic gates
Collections
:
-
Statistics
Efficient Agile Sink Selection in Wireless Sensor Networks Based on Compressed Sensing
Show full item record
| contributor author | Mahmudimanesh, M. , Naseri, A. , Suri, N. | |
| date accessioned | 2020-03-12T20:01:05Z | |
| date available | 2020-03-12T20:01:05Z | |
| date issued | 2014 | |
| identifier other | 6846165.pdf | |
| identifier uri | https://libsearch.um.ac.ir:443/fum/handle/fum/998738?locale-attribute=en | |
| format | general | |
| language | English | |
| publisher | IEEE | |
| title | Efficient Agile Sink Selection in Wireless Sensor Networks Based on Compressed Sensing | |
| type | Conference Paper | |
| contenttype | Metadata Only | |
| identifier padid | 8118972 | |
| subject keywords | elemental semiconductors | |
| subject keywords | etching | |
| subject keywords | germanium | |
| subject keywords | junction gate field effect transistors | |
| subject keywords | power field effect transistors | |
| subject keywords | silicon-on-insulator | |
| subject keywords | Ge-Si | |
| subject keywords | JL pGAA FET | |
| subject keywords | SOI | |
| subject keywords | anisotropic etching | |
| subject keywords | defect removal | |
| subject keywords | high performance inversion | |
| subject keywords | ion enhancement | |
| subject keywords | junctionless gate-all-around FET structure | |
| subject keywords | sidewall INV nFET | |
| subject keywords | subthreshold characteristics | |
| subject keywords | voltage -1 V | |
| subject keywords | voltage -2 V | |
| subject keywords | Abstracts | |
| subject keywords | Field effect transistors | |
| subject keywords | Germanium silicon alloys | |
| subject keywords | Logic gates | |
| identifier doi | 10.1109/ICSICT.2014.7021333 | |
| journal title | istributed Computing in Sensor Systems (DCOSS), 2014 IEEE International Conference on | |
| filesize | 366959 | |
| citations | 0 |


