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Dielectric defects controlling instability in InGaAs n-MOSFETs with Al<inf>2</inf>O<inf>3</inf>/ZrO<inf>2</inf> gate stack

date accessioned2020-03-12T19:55:06Z
date available2020-03-12T19:55:06Z
date issued2014
identifier other6839678.pdf
identifier urihttps://libsearch.um.ac.ir:443/fum/handle/fum/995092?show=full
formatgeneral
languageEnglish
publisherIEEE
titleDielectric defects controlling instability in InGaAs n-MOSFETs with Al<inf>2</inf>O<inf>3</inf>/ZrO<inf>2</inf> gate stack
typeConference Paper
contenttypeMetadata Only
identifier padid8114564
subject keywordsGenerators
subject keywordsGenetic algorithms
subject keywordsLinear programming
subject keywordsOptimization
subject keywordsSociology
subject keywordsStatistics
subject keywordsVoltage control
subject keywordsAutomatic Voltage Regulator
subject keywordsIntegral time absolute error(ITAE)
subject keywordsNon dominated shorting genetic algorithm(NSGA-II)
subject keywordsProportional integral derivative(PID) controller
identifier doi10.1109/ISEG.2014.7005600
journal titleLSI Technology, Systems and Application (VLSI-TSA), Proceedings of Technical Program - 2014 Internat
filesize794903
citations0
contributor rawauthorDeora, S. , Bersuker, G. , Loh, W.-Y. , Matthews, K. , Hobbs, C. , Kirsch, P.D.


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