Influence of plasma power and sputtering agent on gap-fill and MOSFET performances in HDP-CVD STI oxide process
ناشر:
سال
: 2014شناسه الکترونیک: 10.1109/ETFA.2014.7005070
کلیدواژه(گان): Actuators,Oscillators,Process control,Robustness,Sensors,Tuning
کالکشن
:
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آمار بازدید
Influence of plasma power and sputtering agent on gap-fill and MOSFET performances in HDP-CVD STI oxide process
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| date accessioned | 2020-03-12T19:54:35Z | |
| date available | 2020-03-12T19:54:35Z | |
| date issued | 2014 | |
| identifier other | 6839336.pdf | |
| identifier uri | https://libsearch.um.ac.ir:443/fum/handle/fum/994760 | |
| format | general | |
| language | English | |
| publisher | IEEE | |
| title | Influence of plasma power and sputtering agent on gap-fill and MOSFET performances in HDP-CVD STI oxide process | |
| type | Conference Paper | |
| contenttype | Metadata Only | |
| identifier padid | 8114199 | |
| subject keywords | Actuators | |
| subject keywords | Oscillators | |
| subject keywords | Process control | |
| subject keywords | Robustness | |
| subject keywords | Sensors | |
| subject keywords | Tuning | |
| identifier doi | 10.1109/ETFA.2014.7005070 | |
| journal title | ext-Generation Electronics (ISNE), 2014 International Symposium on | |
| filesize | 259400 | |
| citations | 0 | |
| contributor rawauthor | Chun Chi Lai , Liang Yi Li , Tzung Bin Huang , Hung Ju Chien , Tzung Hua Ying |