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Monolithic Integration of E/D-Mode AlGaN/GaN MIS-HEMTs

contributor authorYuechan Kong
contributor authorJianjun Zhou
contributor authorCen Kong
contributor authorYoutao Zhang
contributor authorXun Dong
contributor authorHaiyan Lu
contributor authorTangsheng Chen
contributor authorNaibin Yang
date accessioned2020-03-12T18:40:48Z
date available2020-03-12T18:40:48Z
date issued2014
identifier issn0741-3106
identifier other6714368.pdf
identifier urihttps://libsearch.um.ac.ir:443/fum/handle/fum/966616?show=full
formatgeneral
languageEnglish
publisherIEEE
titleMonolithic Integration of E/D-Mode AlGaN/GaN MIS-HEMTs
typeJournal Paper
contenttypeMetadata Only
identifier padid8000450
subject keywordsIII-V semiconductors
subject keywordsMIS devices
subject keywordsUHF oscillators
subject keywordsaluminium compounds
subject keywordsdirect coupled FET logic
subject keywordsgallium compounds
subject keywordshigh electron mobility transistors
subject keywordshigh-k dielectric thin films
subject keywordsmicrowave field effect transistors
subject keywordsmillimetre wave field effect transistors
subject keywordswide band gap semiconductors
subject keywords51-stage ring oscillator
subject keywordsAlGaN-GaN
subject keywordsD-mode devices
subject keywordsE-D-mode AlGaN-GaN MIS-HEMT
subject keywordsE-mode devices
subject keywordsdirect-coupled FET logic E-D MIS-HEMT inverter
subject keywordsenhancement-depletion-mode AlGaN-GaN MIS-HEMT
subject keywordsfrequency 27.5
identifier doi10.1109/LED.2013.2297433
journal titleElectron Device Letters, IEEE
journal volume35
journal issue3
filesize1075602
citations0


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