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Numerical Analysis of Breakdown Voltage Enhancement in AlGaN/GaN HEMTs With a High-<formula formulatype="inline"> <img src="/images/tex/348.gif" alt="k"> </formula> Passivation Layer

contributor authorHanawa, H.
contributor authorOnodera, Hidetoshi
contributor authorNakajima, Akitoshi
contributor authorHorio, K.
date accessioned2020-03-12T18:40:30Z
date available2020-03-12T18:40:30Z
date issued2014
identifier issn0018-9383
identifier other6712055.pdf
identifier urihttps://libsearch.um.ac.ir:443/fum/handle/fum/966440?show=full
formatgeneral
languageEnglish
publisherIEEE
titleNumerical Analysis of Breakdown Voltage Enhancement in AlGaN/GaN HEMTs With a High-<formula formulatype="inline"> <img src="/images/tex/348.gif" alt="k"> </formula> Passivation Layer
typeJournal Paper
contenttypeMetadata Only
identifier padid8000254
subject keywordsIII-V semiconductors
subject keywordsaluminium compounds
subject keywordsgallium compounds
subject keywordshigh electron mobility transistors
subject keywordshigh-k dielectric thin films
subject keywordsnumerical analysis
subject keywordspassivation
subject keywordspermittivity
subject keywordssemiconductor device breakdown
subject keywordswide band gap semiconductors
subject keywords2Dmbreakdown characteristic analysis
subject keywordsAlGaN-GaN
subject keywordsHEMTs
subject keywordsOFF-state breakdown voltage
subject keywordsbreakdown voltage enhancement
subject keywordsbuffer layer
subject keywordsdeep acceptor
subject keywordsdeep donor
subject keywordsdrain edge
subject keywordselectric field
subject keywordshigh electron mobility transistors
subject keywordshigh-k passivation layer
subject keywordsinsulator
subject keywordsnumer
identifier doi10.1109/TED.2014.2298194
journal titleElectron Devices, IEEE Transactions on
journal volume61
journal issue3
filesize3206088
citations0


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