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Low Dark Current Amorphous Silicon Metal-Semiconductor-Metal Photodetector for Digital Imaging Applications

contributor authorGhanbarzadeh, Sina
contributor authorAbbaszadeh, Shiva
contributor authorKarim, K.S.
date accessioned2020-03-12T18:40:06Z
date available2020-03-12T18:40:06Z
date issued2014
identifier issn0741-3106
identifier other6709798.pdf
identifier urihttps://libsearch.um.ac.ir:443/fum/handle/fum/966202?show=full
formatgeneral
languageEnglish
publisherIEEE
titleLow Dark Current Amorphous Silicon Metal-Semiconductor-Metal Photodetector for Digital Imaging Applications
typeJournal Paper
contenttypeMetadata Only
identifier padid7999983
subject keywordsamorphous semiconductors
subject keywordsdisplay devices
subject keywordselemental semiconductors
subject keywordsphotodetectors
subject keywordssilicon
subject keywordsthin film transistors
subject keywordsSi
subject keywordsdark current
subject keywordsdigital imaging applications
subject keywordsdisplay fabrication process
subject keywordselectric-fields
subject keywordslateral amorphous silicon
subject keywordsmetal-semiconductor-metal photodetector
subject keywordsphotosensor
subject keywordsthin film transistor
subject keywordsthin organic blocking layer
subject keywordsAmorphous silicon
subject keywordsDark current
subject keywordsDetectors
subject keywordsPIN photodiodes
subject keywordsPhotoconductivity
subject keywordsPolyimides
subject keywordsAmorphous silicon
subject keywordsMSM photodetectors
subject keywordsdark-current
subject keywordsindirect con
identifier doi10.1109/LED.2013.2295976
journal titleElectron Device Letters, IEEE
journal volume35
journal issue2
filesize317849
citations0


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