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Impact of Plasma Postoxidation Temperature on the Electrical Properties of <formula formulatype="inline"> <img src="/images/tex/21365.gif" alt="{\\rm Al}_{2}{\\rm O}_{3}/{\\rm GeO}_{x}/{\\rm Ge}"> </formula> pMOSFETs and nMOSFETs

contributor authorRui Zhang
contributor authorJu-Chin Lin
contributor authorXiao Yu
contributor authorTakenaka, Mitsuru
contributor authorTakagi, Shinichi
date accessioned2020-03-12T18:39:13Z
date available2020-03-12T18:39:13Z
date issued2014
identifier issn0018-9383
identifier other6704298.pdf
identifier urihttps://libsearch.um.ac.ir:443/fum/handle/fum/965720?show=full
formatgeneral
languageEnglish
publisherIEEE
titleImpact of Plasma Postoxidation Temperature on the Electrical Properties of <formula formulatype="inline"> <img src="/images/tex/21365.gif" alt="{\\rm Al}_{2}{\\rm O}_{3}/{\\rm GeO}_{x}/{\\rm Ge}"> </formula> pMOSFETs and nMOSFETs
typeJournal Paper
contenttypeMetadata Only
identifier padid7999411
subject keywordsMOSFET
subject keywordsaluminium compounds
subject keywordsgermanium
subject keywordsgermanium compounds
subject keywordshole mobility
subject keywordsinterface roughness
subject keywordsinterface states
subject keywordsoxidation
subject keywordssurface roughness
subject keywordstransmission electron microscopy
subject keywordsAl<
subject keywordssub>
subject keywords2<
subject keywords/sub>
subject keywordsO<
subject keywordssub>
subject keywords3<
subject keywords/sub>
subject keywords-GeO<
subject keywordssub>
subject keywordsx<
subject keywords/sub>
subject keywords-Ge
subject keywordsMOS interface roughness
subject keywordselectrical properties
subject keywordselectron mobility
subject keywordshole mobility
subject keywordsinterface trap density
subject keywordsn-channel MOSFET
subject keywordsp-channel MOSFET
subject keywordsplasma post oxidation temperature
subject keywordssurface roughness
subject keywordstemperature 293 K to 298 K
subject keywordstemperature 3
identifier doi10.1109/TED.2013.2295822
journal titleElectron Devices, IEEE Transactions on
journal volume61
journal issue2
filesize1416382
citations0


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