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A Complete Resistive-Open Defect Analysis for Thermally Assisted Switching MRAMs

contributor authorAzevedo, Joao
contributor authorVirazel, A.
contributor authorBosio, A.
contributor authorDilillo, L.
contributor authorGirard, P.
contributor authorTodri-Sanial, Aida
contributor authorAlvarez-Herault, Jeremy
contributor authorMackay, Ken
date accessioned2020-03-12T18:38:45Z
date available2020-03-12T18:38:45Z
date issued2014
identifier issn1063-8210
identifier other6701223.pdf
identifier urihttps://libsearch.um.ac.ir:443/fum/handle/fum/965451?show=full
formatgeneral
languageEnglish
publisherIEEE
titleA Complete Resistive-Open Defect Analysis for Thermally Assisted Switching MRAMs
typeJournal Paper
contenttypeMetadata Only
identifier padid7999106
subject keywordsMRAM devices
subject keywordscomplete resistive-open defect analysis
subject keywordsdouble-cell faulty behavior
subject keywordselectrical simulation
subject keywordshigh-integration density
subject keywordshypothetical 16 word TAS-MRAM architecture
subject keywordsmagnetic random access memory
subject keywordsread and write operation
subject keywordsthermally assisted switching MRAM
subject keywordsuniversal on-chip memory
subject keywordsHeating
subject keywordsMagnetic domains
subject keywordsMagnetic separation
subject keywordsMagnetic switching
subject keywordsMagnetic tunneling
subject keywordsMagnetization
subject keywordsSwitches
subject keywordsFault modeling
subject keywordsnonvolatile memories (NVM)
subject keywordsresistive-open defects
subject keywordsspintronics
subject keywordstest
subject keywordstest.
identifier doi10.1109/TVLSI.2013.2294080
journal titleVery Large Scale Integration (VLSI) Systems, IEEE Transactions on
journal volume22
journal issue11
filesize2625871
citations0


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