Datasheet Driven Silicon Carbide Power MOSFET Model
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: 2014شناسه الکترونیک: 10.1109/TPEL.2013.2295774
کلیدواژه(گان): capacitance,power MOSFET,semiconductor device models,silicon compounds,switching,wide band gap semiconductors,CV characteristics,SiC,channel current,current 20 A,datasheet driven silicon carbide power MOSFET model,dc characteristics,internal capacitances,on-state resistance,switching characteristics,temperature 25 degC to 225 degC,voltage 1200 V,Capacitance,Logic gates,MOSFET,Mathematical model,Parameter extraction,Semiconductor device modeling,Silicon carbide,Device char
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Datasheet Driven Silicon Carbide Power MOSFET Model
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| contributor author | Mudholkar, Mihir | |
| contributor author | Ahmed, Shehab | |
| contributor author | Ericson, M. Nance | |
| contributor author | Frank, S. Shane | |
| contributor author | Britton, Charles L. | |
| contributor author | Mantooth, Homer Alan | |
| date accessioned | 2020-03-12T18:37:15Z | |
| date available | 2020-03-12T18:37:15Z | |
| date issued | 2014 | |
| identifier issn | 0885-8993 | |
| identifier other | 6690196.pdf | |
| identifier uri | https://libsearch.um.ac.ir:443/fum/handle/fum/964600 | |
| format | general | |
| language | English | |
| publisher | IEEE | |
| title | Datasheet Driven Silicon Carbide Power MOSFET Model | |
| type | Journal Paper | |
| contenttype | Metadata Only | |
| identifier padid | 7998138 | |
| subject keywords | capacitance | |
| subject keywords | power MOSFET | |
| subject keywords | semiconductor device models | |
| subject keywords | silicon compounds | |
| subject keywords | switching | |
| subject keywords | wide band gap semiconductors | |
| subject keywords | CV characteristics | |
| subject keywords | SiC | |
| subject keywords | channel current | |
| subject keywords | current 20 A | |
| subject keywords | datasheet driven silicon carbide power MOSFET model | |
| subject keywords | dc characteristics | |
| subject keywords | internal capacitances | |
| subject keywords | on-state resistance | |
| subject keywords | switching characteristics | |
| subject keywords | temperature 25 degC to 225 degC | |
| subject keywords | voltage 1200 V | |
| subject keywords | Capacitance | |
| subject keywords | Logic gates | |
| subject keywords | MOSFET | |
| subject keywords | Mathematical model | |
| subject keywords | Parameter extraction | |
| subject keywords | Semiconductor device modeling | |
| subject keywords | Silicon carbide | |
| subject keywords | Device char | |
| identifier doi | 10.1109/TPEL.2013.2295774 | |
| journal title | Power Electronics, IEEE Transactions on | |
| journal volume | 29 | |
| journal issue | 5 | |
| filesize | 1912211 | |
| citations | 0 |