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3.7 kV Vertical GaN PN Diodes

contributor authorKizilyalli, Isik C.
contributor authorEdwards, Andrew P.
contributor authorNie, Hui
contributor authorBour, David
contributor authorPrunty, Thomas
contributor authorDisney, Don
date accessioned2020-03-12T18:36:22Z
date available2020-03-12T18:36:22Z
date issued2014
identifier issn0741-3106
identifier other6684571.pdf
identifier urihttps://libsearch.um.ac.ir:443/fum/handle/fum/964098?show=full
formatgeneral
languageEnglish
publisherIEEE
title3.7 kV Vertical GaN PN Diodes
typeJournal Paper
contenttypeMetadata Only
identifier padid7997544
subject keywordsMOCVD
subject keywordsavalanche breakdown
subject keywordsgallium compounds
subject keywordspower semiconductor diodes
subject keywordssemiconductor device measurement
subject keywordssemiconductor growth
subject keywordswide band gap semiconductors
subject keywordsGaN
subject keywordsMOCVD
subject keywordsarea differential specific on resistance
subject keywordsbreakdown voltages
subject keywordsbulk substrates
subject keywordslow defect density
subject keywordspower electronics application
subject keywordsvertical GaN PN diodes
subject keywordsvoltage 3.7 kV
subject keywordswide band gap semiconductor devices
subject keywordsGallium nitride
subject keywordsSchottky diodes
subject keywordsSilicon
subject keywordsSilicon carbide
subject keywordsSubstrates
subject keywordsGallium nitride
subject keywordsavalanche breakdown
subject keywordspower diod
identifier doi10.1109/LED.2013.2294175
journal titleElectron Device Letters, IEEE
journal volume35
journal issue2
filesize1110679
citations0


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