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nMOS Short Channel Device Characteristics After Soft Oxide Breakdown and Implications for Reliability Projections and Circuits

contributor authorNicollian, Paul E.
contributor authorMin Chen
contributor authorYang Yang
contributor authorChancellor, Cathy /A/.
contributor authorReddy, Viswanath K.
date accessioned2020-03-12T18:36:06Z
date available2020-03-12T18:36:06Z
date issued2014
identifier issn0018-9383
identifier other6683066.pdf
identifier urihttps://libsearch.um.ac.ir:443/fum/handle/fum/963942?show=full
formatgeneral
languageEnglish
publisherIEEE
titlenMOS Short Channel Device Characteristics After Soft Oxide Breakdown and Implications for Reliability Projections and Circuits
typeJournal Paper
contenttypeMetadata Only
identifier padid7997347
subject keywordsMOSFET
subject keywordsequivalent circuits
subject keywordssemiconductor device breakdown
subject keywordssemiconductor device reliability
subject keywordsN-channel field effect transistor device terminals
subject keywordscircuit design
subject keywordsequivalent circuit
subject keywordsmobility degradation
subject keywordsnMOS short channel device characteristics
subject keywordsreliability projections
subject keywordssoft oxide breakdown
subject keywordsthreshold voltage shift
subject keywordsDegradation
subject keywordsDelays
subject keywordsElectric breakdown
subject keywordsIntegrated circuit modeling
subject keywordsIntegrated circuit reliability
subject keywordsLogic gates
subject keywordsBreakdown
subject keywordsSiON
subject keywordsdielectric
subject keywordsoxide
subject keywordsreliability
subject keywordstime-dependent-d
identifier doi10.1109/TED.2013.2292551
journal titleElectron Devices, IEEE Transactions on
journal volume61
journal issue1
filesize802042
citations0


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