GeSn Heterojunction LEDs on Si Substrates
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سال
: 2014شناسه الکترونیک: 10.1109/LPT.2013.2291571
کلیدواژه(گان): electroluminescence,elemental semiconductors,energy gap,epitaxial layers,germanium,germanium compounds,integrated optics,light emitting diodes,molecular beam epitaxial growth,p-i-n diodes,photonic band gap,semiconductor doping,silicon,substrates,Ge,GeSn,Si,bandgap electroluminescence emission,bandgap energies,device structures,emission spectra,germanium virtual substrates,heterojunction LED,in-plane strain,in-situ doped pin junctions,light intensity,reciprocal space map
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GeSn Heterojunction LEDs on Si Substrates
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| contributor author | Oehme, Michael | |
| contributor author | Kostecki, Konrad | |
| contributor author | Arguirov, Tzanimir | |
| contributor author | Mussler, Gregor | |
| contributor author | Kaiheng Ye | |
| contributor author | Gollhofer, Martin | |
| contributor author | Schmid, Maurizio | |
| contributor author | Kaschel, Mathias | |
| contributor author | Korner, Roman Alexander | |
| contributor author | Kittler, M. | |
| contributor author | Buca, Dan | |
| contributor author | Kasper, Erich | |
| contributor author | Schulze, J. | |
| date accessioned | 2020-03-12T18:33:32Z | |
| date available | 2020-03-12T18:33:32Z | |
| date issued | 2014 | |
| identifier issn | 1041-1135 | |
| identifier other | 6671355.pdf | |
| identifier uri | https://libsearch.um.ac.ir:443/fum/handle/fum/962490 | |
| format | general | |
| language | English | |
| publisher | IEEE | |
| title | GeSn Heterojunction LEDs on Si Substrates | |
| type | Journal Paper | |
| contenttype | Metadata Only | |
| identifier padid | 7995506 | |
| subject keywords | electroluminescence | |
| subject keywords | elemental semiconductors | |
| subject keywords | energy gap | |
| subject keywords | epitaxial layers | |
| subject keywords | germanium | |
| subject keywords | germanium compounds | |
| subject keywords | integrated optics | |
| subject keywords | light emitting diodes | |
| subject keywords | molecular beam epitaxial growth | |
| subject keywords | p-i-n diodes | |
| subject keywords | photonic band gap | |
| subject keywords | semiconductor doping | |
| subject keywords | silicon | |
| subject keywords | substrates | |
| subject keywords | Ge | |
| subject keywords | GeSn | |
| subject keywords | Si | |
| subject keywords | bandgap electroluminescence emission | |
| subject keywords | bandgap energies | |
| subject keywords | device structures | |
| subject keywords | emission spectra | |
| subject keywords | germanium virtual substrates | |
| subject keywords | heterojunction LED | |
| subject keywords | in-plane strain | |
| subject keywords | in-situ doped pin junctions | |
| subject keywords | light intensity | |
| subject keywords | reciprocal space map | |
| identifier doi | 10.1109/LPT.2013.2291571 | |
| journal title | Photonics Technology Letters, IEEE | |
| journal volume | 26 | |
| journal issue | 2 | |
| filesize | 437813 | |
| citations | 0 |