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Suppression of Hole Overflow and Enhancement of Light Emission Efficiency in Si Quantum Dots Based Silicon Nitride Light Emitting Diodes

contributor authorRui Huang
contributor authorZewen Lin
contributor authorZhenxu Lin
contributor authorChao Song
contributor authorXiang Wang
contributor authorYanqing Guo
contributor authorJie Song
date accessioned2020-03-12T18:29:54Z
date available2020-03-12T18:29:54Z
date issued2014
identifier issn1077-260X
identifier other6630077.pdf
identifier urihttps://libsearch.um.ac.ir:443/fum/handle/fum/960514?show=full
formatgeneral
languageEnglish
publisherIEEE
titleSuppression of Hole Overflow and Enhancement of Light Emission Efficiency in Si Quantum Dots Based Silicon Nitride Light Emitting Diodes
typeJournal Paper
contenttypeMetadata Only
identifier padid7993198
subject keywordselectron-hole recombination
subject keywordselemental semiconductors
subject keywordslight emitting diodes
subject keywordsluminescence
subject keywordsquantum dots
subject keywordssilicon
subject keywordssilicon compounds
subject keywordsSi-SiN
subject keywordsbimolecular radiative recombination probability
subject keywordshole blocking layer
subject keywordshole overflow suppression
subject keywordslight emission efficiency enhancement
subject keywordslight emitting diodes
subject keywordsluminescent active
subject keywordsquantum dot
subject keywordsvoltage 6 V
subject keywordswhite light emission
subject keywordsCurrent density
subject keywordsElectroluminescence
subject keywordsLight emitting diodes
subject keywordsQuantum dots
subject keywordsRadiative recombination
subject keywordsSilicon
subject keywordsSilicon compounds
subject keywordsEle
identifier doi10.1109/JSTQE.2013.2284420
journal titleSelected Topics in Quantum Electronics, IEEE Journal of
journal volume20
journal issue4
filesize562365
citations0


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