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contributor authorRunruo Chen
contributor authorFang Zheng Peng
date accessioned2020-03-12T18:29:33Z
date available2020-03-12T18:29:33Z
date issued2014
identifier issn0885-8993
identifier other6623145.pdf
identifier urihttps://libsearch.um.ac.ir:443/fum/handle/fum/960311?show=full
formatgeneral
languageEnglish
publisherIEEE
titleA High-Performance Resonant Gate-Drive Circuit for MOSFETs and IGBTs
typeJournal Paper
contenttypeMetadata Only
identifier padid7992970
subject keywordsMOSFET
subject keywordsdriver circuits
subject keywordsinductors
subject keywordsinsulated gate bipolar transistors
subject keywordsnetwork topology
subject keywordsswitching
subject keywordsIGBTs
subject keywordsMOSFETs
subject keywordsfast switching
subject keywordshigh-performance resonant gate-drive circuit
subject keywordspower loss minimisation
subject keywordsresonant inductor
subject keywordsInductors
subject keywordsInsulated gate bipolar transistors
subject keywordsLogic gates
subject keywordsMOSFET
subject keywordsRLC circuits
subject keywordsResistors
subject keywordsSwitching circuits
subject keywordsGate-drive circuits
subject keywordsMOSFET and IGBT driver
subject keywordsresonant circuits
subject keywordssoft switching
identifier doi10.1109/TPEL.2013.2284836
journal titlePower Electronics, IEEE Transactions on
journal volume29
journal issue8
filesize754962
citations0


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