Real-Time, In-Line, and Mapping Spectroscopic Ellipsometry for Applications in Cu(In <formula formulatype="inline"> <img src="/images/tex/21173.gif" alt="_{{\\bf 1}-{bm x}}"> </formula>Ga<formula formulatype="inline"> <img src="/images/tex/20922.gif" alt="_{bm x}"> </formula>)Se<formula formulatype="inline"> <img src="/images/tex/996.gif" alt="

نویسنده:

ناشر:

IEEE

سال

: 2014

شناسه الکترونیک: 10.1109/JPHOTOV.2013.2282745

یو آر آی: https://libsearch.um.ac.ir:443/fum/handle/fum/960306

کلیدواژه(گان): copper compounds,ellipsometry,gallium compounds,grain size,indium compounds,semiconductor thin films,solar cells,stoichiometry,ternary semiconductors,thickness measurement,CIGS Cu stoichiometry,CIGS layer thicknesses,Cu(In<,sub>,1-x<,/sub>,Ga<,sub>,x<,/sub>,)Se<,sub>,2<,/sub>,alloy composition,contact layer thickness,contactless metrologies,ex situ single-spot analysis,grain size,high-speed multichannel spectroscopic ellipsometry,in-line mapping spectr

کالکشن :

Latin Articles

نمایش متادیتا پنهان کردن متادیتا
آمار بازدید

Real-Time, In-Line, and Mapping Spectroscopic Ellipsometry for Applications in Cu(In <formula formulatype="inline"> <img src="/images/tex/21173.gif" alt="_{{\\bf 1}-{bm x}}"> </formula>Ga<formula formulatype="inline"> <img src="/images/tex/20922.gif" alt="_{bm x}"> </formula>)Se<formula formulatype="inline"> <img src="/images/tex/996.gif" alt="_{\\bf 2}"> <

contributor author	Aryal, Puruswottam
contributor author	Pradhan, Parth
contributor author	Attygalle, Dinesh
contributor author	Ibdah, Abdel-Rahman /A/.
contributor author	Aryal, Krishna
contributor author	Ranjan, Viresh
contributor author	Marsillac, Sylvain
contributor author	Podraza, Nikolas J.
contributor author	Collins, Robert W.
date accessioned	2020-03-12T18:29:32Z
date available	2020-03-12T18:29:32Z
date issued	2014
identifier issn	2156-3381
identifier other	6623109.pdf
identifier uri	https://libsearch.um.ac.ir:443/fum/handle/fum/960306
format	general
language	English
publisher	IEEE
title	Real-Time, In-Line, and Mapping Spectroscopic Ellipsometry for Applications in Cu(In <formula formulatype="inline"> <img src="/images/tex/21173.gif" alt="_{{\\bf 1}-{bm x}}"> </formula>Ga<formula formulatype="inline"> <img src="/images/tex/20922.gif" alt="_{bm x}"> </formula>)Se<formula formulatype="inline"> <img src="/images/tex/996.gif" alt="_{\\bf 2}"> <
type	Journal Paper
contenttype	Metadata Only
identifier padid	7992965
subject keywords	copper compounds
subject keywords	ellipsometry
subject keywords	gallium compounds
subject keywords	grain size
subject keywords	indium compounds
subject keywords	semiconductor thin films
subject keywords	solar cells
subject keywords	stoichiometry
subject keywords	ternary semiconductors
subject keywords	thickness measurement
subject keywords	CIGS Cu stoichiometry
subject keywords	CIGS layer thicknesses
subject keywords	Cu(In<
subject keywords	sub>
subject keywords	1-x<
subject keywords	/sub>
subject keywords	Ga<
subject keywords	sub>
subject keywords	x<
subject keywords	/sub>
subject keywords	)Se<
subject keywords	sub>
subject keywords	2<
subject keywords	/sub>
subject keywords	alloy composition
subject keywords	contact layer thickness
subject keywords	contactless metrologies
subject keywords	ex situ single-spot analysis
subject keywords	grain size
subject keywords	high-speed multichannel spectroscopic ellipsometry
subject keywords	in-line mapping spectr
identifier doi	10.1109/JPHOTOV.2013.2282745
journal title	Photovoltaics, IEEE Journal of
journal volume	4
journal issue	1
filesize	1810636
citations	0

نویسنده:

ناشر:

سال

شناسه الکترونیک: 10.1109/JPHOTOV.2013.2282745

Show full item record

Related items

A CMOS Temperature Sensor With a Voltage-Calibrated Inaccuracy of $\\pm$ 0.15$ ^{\\circ}$ C (3$\\sigma$ ) From $-$ 55$^{\\circ}$ C to 125 ﻿

Joint Reliability Importance in a Consecutive- $k$ -out-of-$n$ :F System and an $m$-Consecutive- $k$-out-of-$n$:F System for Markov-Dependent Components ﻿

An Embedded 65 nm CMOS Remote Temperature Sensor With Digital Beta Correction and Series Resistance Cancellation Achieving an Inaccuracy of 0.4$^{\\circ}$C (3$\\sigma$ ) From $-$ 40$^{\\circ}$ C to 130 ﻿

A CMOS Temperature Sensor With a Voltage-Calibrated Inaccuracy of $\\pm$ 0.15$ ^{\\circ}$ C (3$\\sigma$ ) From $-$ 55$^{\\circ}$ C to 125

Joint Reliability Importance in a Consecutive- $k$ -out-of-$n$ :F System and an $m$-Consecutive- $k$-out-of-$n$:F System for Markov-Dependent Components

An Embedded 65 nm CMOS Remote Temperature Sensor With Digital Beta Correction and Series Resistance Cancellation Achieving an Inaccuracy of 0.4$^{\\circ}$C (3$\\sigma$ ) From $-$ 40$^{\\circ}$ C to 130