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A 200 °C Safety System at Power-Up of Normally On SiC JFETs Inverters

contributor authorRisaletto, Damien
contributor authorBergogne, Dominique
contributor authorDubois, Fabien
contributor authorMorel, Herve
contributor authorAllard, Bruno
contributor authorMeuret, Regis
date accessioned2020-03-12T18:28:08Z
date available2020-03-12T18:28:08Z
date issued2014
identifier issn0885-8993
identifier other6600900.pdf
identifier urihttps://libsearch.um.ac.ir:443/fum/handle/fum/959517?locale-attribute=en&show=full
formatgeneral
languageEnglish
publisherIEEE
titleA 200 °C Safety System at Power-Up of Normally On SiC JFETs Inverters
typeJournal Paper
contenttypeMetadata Only
identifier padid7992094
subject keywordsJFET circuits
subject keywordsageing
subject keywordscircuit reliability
subject keywordsinvertors
subject keywordspower semiconductor devices
subject keywordssilicon compounds
subject keywordswide band gap semiconductors
subject keywordsJFET ageing
subject keywordscurrent 10 A
subject keywordsinverter operation
subject keywordsjunction field effect transistor
subject keywordsnormally on JFET inverters
subject keywordsnormally on power device
subject keywordspower devices
subject keywordsprotection circuit
subject keywordsreliability test
subject keywordssafety system
subject keywordstemperature 27 C to 200 C
subject keywordsvoltage 540 V
subject keywordsvoltage fed inverter
subject keywordsInductance
subject keywordsInverters
subject keywordsJFETs
subject keywordsLogic gates
subject keywordsSafety
subject keywordsSilicon carbide
subject keywordsTemperature
subject keywordsExperimental circui
identifier doi10.1109/TPEL.2013.2281669
journal titlePower Electronics, IEEE Transactions on
journal volume29
journal issue5
filesize1658464
citations0


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