Gate length scaling effect on high electron mobility transistors devices using AlGaN/GaN and AlInN/AlN/GaN heterostructures
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Year
: 2014DOI: 10.1166/jnn.2014.8726
Keyword(s): 2DEG,AlInN/AlN/GaN,High
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Gate length scaling effect on high electron mobility transistors devices using AlGaN/GaN and AlInN/AlN/GaN heterostructures
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| date accessioned | 2020-03-12T16:44:41Z | |
| date available | 2020-03-12T16:44:41Z | |
| date issued | 2014 | |
| identifier issn | 1533-4880 | |
| identifier other | 10.1166-jnn.2014.8726.pdf | |
| identifier uri | https://libsearch.um.ac.ir:443/fum/handle/fum/931444?locale-attribute=en | |
| format | general | |
| language | English | |
| publisher | American Scientific Publishers | |
| title | Gate length scaling effect on high electron mobility transistors devices using AlGaN/GaN and AlInN/AlN/GaN heterostructures | |
| type | Journal Paper | |
| contenttype | Metadata Only | |
| identifier padid | 7678495 | |
| subject keywords | 2DEG | |
| subject keywords | AlInN/AlN/GaN | |
| subject keywords | High | |
| identifier doi | 10.1166/jnn.2014.8726 | |
| journal title | Journal of Nanoscience and Nanotechnology | |
| journal volume | 14 | |
| journal issue | 8 | |
| filesize | 683834 | |
| citations | 0 | |
| contributor rawauthor | Liao, S.Y. - Lu, C.C. - Chang, T. - Huang, C.F. - Cheng, C.H. - Chang, L.B. |