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[IEEE 2011 International Semiconductor Device Research Symposium (ISDRS) - College Park, MD, USA (2011.12.7-2011.12.9)] 2011 International Semiconductor Device Research Symposium (ISDRS) - Graphene transistors for RF applications: Opportunities and challenges

contributor authorMoon, J. S.
contributor authorAntcliffe, M.
contributor authorSeo, H. C.
contributor authorLin, S. C.
contributor authorSchmitz, A.
contributor authorMilosavljevic, I.
contributor authorMcCalla, K.
contributor authorWong, D.
contributor authorGaskill, D. K.
contributor authorCampbell, P. M.
contributor authorLee, K.-M.
contributor authorAsbeck, P.
date accessioned2020-03-12T10:16:03Z
date available2020-03-12T10:16:03Z
date issued2011
identifier otherjYY6HwCCuufN338KWKCJ30XtWa2T0rerOWjI_fARIKlGBHFVDl.pdf
identifier urihttps://libsearch.um.ac.ir:443/fum/handle/fum/831865?show=full
formatgeneral
languageEnglish
title[IEEE 2011 International Semiconductor Device Research Symposium (ISDRS) - College Park, MD, USA (2011.12.7-2011.12.9)] 2011 International Semiconductor Device Research Symposium (ISDRS) - Graphene transistors for RF applications: Opportunities and challenges
typeJournal Paper
contenttypeFulltext
contenttypeFulltext
identifier padid6591266
identifier doi10.1109/ISDRS.2011.6135155
journal titleOsmania Journal of Social Sciences
coverageAcademic
pages1-2
filesize713851
citations2


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