Properties and design theory of ultrafast GaAs metal-semiconductor-metal photodetector with symmetrical Schottky contacts
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: 1990DOI: 10.1109/16.43797
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Properties and design theory of ultrafast GaAs metal-semiconductor-metal photodetector with symmetrical Schottky contacts
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| contributor author | Nakajima, K. | |
| contributor author | Iida, T. | |
| contributor author | Sugimoto, K.-I. | |
| contributor author | Kan, H. | |
| contributor author | Mizushima, Y. | |
| date accessioned | 2020-03-12T05:45:21Z | |
| date available | 2020-03-12T05:45:21Z | |
| date issued | 1990 | |
| identifier other | Ou9OHp9ro1LxL9b_rTbxihBeM0sp7bvUk4nePS4Lk8JfyyzWFy.pdf | |
| identifier uri | https://libsearch.um.ac.ir:443/fum/handle/fum/768870?locale-attribute=en | |
| format | general | |
| language | English | |
| publisher | IEEE | |
| title | Properties and design theory of ultrafast GaAs metal-semiconductor-metal photodetector with symmetrical Schottky contacts | |
| type | Journal Paper | |
| contenttype | Fulltext | |
| contenttype | Fulltext | |
| identifier padid | 5951967 | |
| identifier doi | 10.1109/16.43797 | |
| journal title | IEEE Transactions on Electron Devices | |
| coverage | Academic | |
| pages | 31-35 | |
| journal volume | 37 | |
| journal issue | 1 | |
| filesize | 523950 | |
| citations | 1 |