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[IEEE 2011 IEEE International Electron Devices Meeting (IEDM) - Washington, DC, USA (2011.12.5-2011.12.7)] 2011 International Electron Devices Meeting - Fabrication, characterization, and physics of III–V heterojunction tunneling Field Effect Transistors (H-TFET) for steep sub-threshold swing

contributor authorDewey, G.
contributor authorChu-Kung, B.
contributor authorBoardman, J.
contributor authorFastenau, J. M.
contributor authorKavalieros, J.
contributor authorKotlyar, R.
contributor authorLiu, W. K.
contributor authorLubyshev, D.
contributor authorMetz, M.
contributor authorMukherjee, N.
contributor authorOakey, P.
contributor authorPillarisetty, R.
contributor authorRadosavljevic, M.
contributor authorThen, H. W.
contributor authorChau, R.
date accessioned2020-03-11T14:36:47Z
date available2020-03-11T14:36:47Z
date issued2011
identifier otherzNGsFD0TJNQWjh2aF2Iv4D2u8XxpVnRfnmNv0WGHzcnFLeMDyr.pdf
identifier urihttps://libsearch.um.ac.ir:443/fum/handle/fum/562342?show=full
formatgeneral
languageEnglish
title[IEEE 2011 IEEE International Electron Devices Meeting (IEDM) - Washington, DC, USA (2011.12.5-2011.12.7)] 2011 International Electron Devices Meeting - Fabrication, characterization, and physics of III–V heterojunction tunneling Field Effect Transistors (H-TFET) for steep sub-threshold swing
typeJournal Paper
contenttypeFulltext
contenttypeFulltext
identifier padid4368517
identifier doi10.1109/IEDM.2011.6131666
journal titleOsmania Journal of Social Sciences
coverageAcademic
pages33.6.1-33.6.4
filesize635341
citations3


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