On the MOSFET Threshold Voltage Extraction by Transconductance and Transconductance-to-Current Ratio Change Methods: Part I—Effect of Gate-Voltage-Dependent Mobility
| contributor author | Rudenko, T. | |
| contributor author | Kilchytska, V. | |
| contributor author | Arshad, M.K.M. | |
| contributor author | Raskin, J.-P. | |
| contributor author | Nazarov, A. | |
| contributor author | Flandre, D. | |
| date accessioned | 2020-03-11T14:20:38Z | |
| date available | 2020-03-11T14:20:38Z | |
| date issued | 2011 | |
| identifier other | IwcMGfe53YX8E5KKEENLHOPMfBEIyCe3eiROIx8YCCzeAqO_Er.pdf | |
| identifier uri | https://libsearch.um.ac.ir:443/fum/handle/fum/558587?show=full | |
| format | general | |
| language | English | |
| publisher | IEEE | |
| title | On the MOSFET Threshold Voltage Extraction by Transconductance and Transconductance-to-Current Ratio Change Methods: Part I—Effect of Gate-Voltage-Dependent Mobility | |
| type | Journal Paper | |
| contenttype | Fulltext | |
| contenttype | Fulltext | |
| identifier padid | 4353415 | |
| identifier doi | 10.1109/ted.2011.2168226 | |
| journal title | IEEE Transactions on Electron Devices | |
| coverage | Academic | |
| pages | 4172-4179 | |
| journal volume | 58 | |
| journal issue | 12 | |
| filesize | 574766 | |
| citations | 6 |