High-Performance Microwave Gate-Recessed AlGaN/AlN/GaN MOS-HEMT With 73% Power-Added Efficiency
Author:
, , , , , , ,Publisher:
Year
: 2011DOI: 10.1109/led.2011.2118736
Collections
:
-
Statistics
High-Performance Microwave Gate-Recessed AlGaN/AlN/GaN MOS-HEMT With 73% Power-Added Efficiency
Show full item record
| contributor author | Yue Hao | |
| contributor author | Ling Yang | |
| contributor author | Xiaohua Ma | |
| contributor author | Jigang Ma | |
| contributor author | Menyi Cao | |
| contributor author | Caiyuan Pan | |
| contributor author | Chong Wang | |
| contributor author | Jincheng Zhang | |
| date accessioned | 2020-03-11T07:56:34Z | |
| date available | 2020-03-11T07:56:34Z | |
| date issued | 2011 | |
| identifier other | syVxkuheSSJT3fIPgc7UybfyanxjPF6_kYiP9IHp4Xlcn9u1ql.pdf | |
| identifier uri | https://libsearch.um.ac.ir:443/fum/handle/fum/467141?locale-attribute=en | |
| format | general | |
| language | English | |
| publisher | IEEE | |
| title | High-Performance Microwave Gate-Recessed AlGaN/AlN/GaN MOS-HEMT With 73% Power-Added Efficiency | |
| type | Journal Paper | |
| contenttype | Fulltext | |
| contenttype | Fulltext | |
| identifier padid | 3946654 | |
| identifier doi | 10.1109/led.2011.2118736 | |
| journal title | IEEE Electron Device Letters | |
| coverage | Academic | |
| pages | 0-628 | |
| journal volume | 32 | |
| journal issue | 5 | |
| filesize | 513529 | |
| citations | 1 |