Calculation of High Field Electron Transport Properties in GaSb and GaAs

Abstract

Electron transport properties in GaSb and<br><br>GaAs are calculated for different temperature, doping<br><br>dependencies at high electric field applications. The<br><br>calculations are performed using a three valleys ensemble<br><br>Monte Carlo model that includes numerical formulations<br><br>of the phonon scattering rates and ionized impurity<br><br>scattering rates. For two materials, we find that electron<br><br>velocity overshoot only occurs when the electric field in<br><br>increased to a value above a certain critical field .This<br><br>critical field is strongly dependent on the material<br><br>parameters. Results from the two materials are finally<br><br>compared. The agreement with the available experimental