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contributor authorSaeid Marjanien
contributor authorRahim Faezen
contributor authorسید ابراهیم حسینیen
contributor authorSeyed Ebrahim Hosseinifa
date accessioned2020-06-06T13:14:50Z
date available2020-06-06T13:14:50Z
date issued2013
identifier urihttps://libsearch.um.ac.ir:443/fum/handle/fum/3347462?show=full
description abstractIn this paper, simulative study on the effects of lattice temperature on a GaInP/6H-SiC strained quantum-well (QW) laser\\'s device is presented. Loss mechanisms are severe in the edge-emitting lasers. As a consequence, the wall-plug efficiency is sensitive to changes in temperature. The lasers used in this work were separate-confinement quantum-well lasers with a single strained GaInP, located in a lattice matched waveguide core and cladding region of 6H-SiC. This paper provides the key results of the wall-plug efficiency upon the lattice temperatureen
languageEnglish
titleAnalysis of Lattice Temperature Effects on a GaInP/6H-SiC Strained Quantum-Well Lasersen
typeJournal Paper
contenttypeExternal Fulltext
subject keywordsWall-plug efficiencyen
subject keywordsLattice temperatureen
subject keywordsSilicon carbide polymersen
subject keywordsQuantum-well lasersen
journal titleAsian Journal of Chemistryen
journal titleAsian Journal of Chemistryfa
pages4715-4717
journal volume25
journal issue9
identifier linkhttps://profdoc.um.ac.ir/paper-abstract-1036998.html
identifier articleid1036998


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