Resistive Switching Characteristic of Low-Temperature Top-Electrode-Free Tin-Oxide Memristor

contributor author	Chih-Chieh Hsu
contributor author	Po-Yang Chuang
contributor author	Yu-Ting Chen
date accessioned	2020-03-15T14:33:39Z
date available	2020-03-15T14:33:39Z
date issued	2017
identifier other	6oI05c4Djnu1gqPypFfaJMaupZQxDlZP3BxsPmk1IEWeiRiJlX.pdf
identifier uri	https://libsearch.um.ac.ir:443/fum/handle/fum/1973267?show=full
format	general
language	English
title	Resistive Switching Characteristic of Low-Temperature Top-Electrode-Free Tin-Oxide Memristor
type	Journal Paper
contenttype	Fulltext
contenttype	Fulltext
identifier padid	13719104
identifier doi	10.1109/TED.2017.2724943
journal title	IEEE Transactions on Electron Devices
coverage	Academic
pages	1-4
filesize	1635540
citations	0