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Radio-frequency small-signal model of hetero-gate-dielectric p-n-p-n tunneling field-effect transistor including charge conservation capacitance and substrate parameters

contributor authorSaeid Marjani
contributor authorSeyed Ebrahim Hosseini
date accessioned2020-03-14T10:09:20Z
date available2020-03-14T10:09:20Z
date issued2015
identifier other4AozDhPB6ekmrQRxO86TnMab3WriF7ZpmYDryUI6RSU26SIU4p.pdf
identifier urihttps://libsearch.um.ac.ir:443/fum/handle/fum/1615096?show=full
formatgeneral
languageEnglish
titleRadio-frequency small-signal model of hetero-gate-dielectric p-n-p-n tunneling field-effect transistor including charge conservation capacitance and substrate parameters
typeJournal Paper
contenttypeFulltext
contenttypeFulltext
identifier padid11680329
identifier doi10.1063/1.4929361
journal titleJournal of Applied Physics
coverageAcademic
journal volume118
journal issue9
filesize1856479
citations10


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