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State and Angular Dependence of Single-Event Upsets in an Asymmetric RC-Hardened SRAM Using Deep Trench Capacitors

contributor authorAlles, Michael L.
contributor authorSchrimpf, R.D.
contributor authorMassengill, Lloyd W.
contributor authorBall, D.R.
contributor authorKelly, Andrew T.
contributor authorHaddad, Nadim F.
contributor authorRodgers, John C.
contributor authorRoss, Jason F.
contributor authorChan, Erwin Hoi Wing
contributor authorRaman, Ashok
contributor authorTurowski, Marek
date accessioned2020-03-13T00:31:12Z
date available2020-03-13T00:31:12Z
date issued2014
identifier issn0018-9499
identifier other6971240.pdf
identifier urihttps://libsearch.um.ac.ir:443/fum/handle/fum/1149700?show=full
formatgeneral
languageEnglish
publisherIEEE
titleState and Angular Dependence of Single-Event Upsets in an Asymmetric RC-Hardened SRAM Using Deep Trench Capacitors
typeJournal Paper
contenttypeMetadata Only
identifier padid8333007
subject keywordsSRAM chips
subject keywordsboron
subject keywordscapacitors
subject keywordsradiation hardening (electronics)
subject keywordsangular dependence
subject keywordsasymmetric RC-hardened SRAM
subject keywordscapacitive hardening
subject keywordsdeep trench capacitors
subject keywordsprocess induced boron depletion
subject keywordssingle event upsets
subject keywordssize 90 nm
subject keywordsstate dependence
subject keywordsCMOS process
subject keywordsCapacitors
subject keywordsDoping
subject keywordsRadiation hardening (electronics)
subject keywordsSRAM cells
subject keywordsSingle event upsets
subject keywordsAsymmetric RC hardening
subject keywordsCMOS
subject keywordsSEU
subject keywordsSRAM
subject keywordsdeep trench capacitor
identifier doi10.1109/TNS.2014.2368931
journal titleNuclear Science, IEEE Transactions on
journal volume61
journal issue6
filesize1130223
citations0


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