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Circuit Level Modeling of Extra Combinational Delays in SRAM-Based FPGAs Due to Transient Ionizing Radiation

contributor authorDarvishi, Mostafa
contributor authorAudet, Yves
contributor authorBlaquiere, Yves
contributor authorThibeault, Claude
contributor authorPichette, Simon
contributor authorTazi, Fatima Zahra
date accessioned2020-03-13T00:31:12Z
date available2020-03-13T00:31:12Z
date issued2014
identifier issn0018-9499
identifier other6971238.pdf
identifier urihttps://libsearch.um.ac.ir:443/fum/handle/fum/1149699?show=full
formatgeneral
languageEnglish
publisherIEEE
titleCircuit Level Modeling of Extra Combinational Delays in SRAM-Based FPGAs Due to Transient Ionizing Radiation
typeJournal Paper
contenttypeMetadata Only
identifier padid8333006
subject keywordsSRAM chips
subject keywordscombinational circuits
subject keywordsdelays
subject keywordsfield programmable gate arrays
subject keywordsintegrated circuit interconnections
subject keywordsintegrated circuit modelling
subject keywordsradiation hardening (electronics)
subject keywordsCLBs
subject keywordsIOBs
subject keywordsSEUs
subject keywordsSRAM-Based FPGAs
subject keywordsVirtex-5
subject keywordscircuit architecture
subject keywordscircuit level modeling
subject keywordscircuit path
subject keywordsconfigurable logic blocks
subject keywordsdelay faults
subject keywordsextra combinational delays
subject keywordsextra interconnection lines
subject keywordsinput-ouput blocks
subject keywordspass transistors
subject keywordsproton irradiation
subject keywordsrouting
subject keywordssingle event upsets
subject keywordstransient ionizing radiation
identifier doi10.1109/TNS.2014.2369424
journal titleNuclear Science, IEEE Transactions on
journal volume61
journal issue6
filesize1004942
citations0


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