Show simple item record

Influence of Transfer Gate Design and Bias on the Radiation Hardness of Pinned Photodiode CMOS Image Sensors

contributor authorGoiffon, Vincent
contributor authorEstribeau, Magali
contributor authorCervantes, Paola
contributor authorMolina, Rafael
contributor authorGaillardin, M.
contributor authorMagnan, Pierre
date accessioned2020-03-13T00:27:36Z
date available2020-03-13T00:27:36Z
date issued2014
identifier issn0018-9499
identifier other6939744.pdf
identifier urihttps://libsearch.um.ac.ir:443/fum/handle/fum/1147557?show=full
formatgeneral
languageEnglish
publisherIEEE
titleInfluence of Transfer Gate Design and Bias on the Radiation Hardness of Pinned Photodiode CMOS Image Sensors
typeJournal Paper
contenttypeMetadata Only
identifier padid8330535
subject keywordsCMOS image sensors
subject keywordscharge exchange
subject keywordsphotodiodes
subject keywordsradiation hardening (electronics)
subject keywordsTG channel shallow trench isolation trapped charge
subject keywordsTG sidewall spacer positive trapped charge
subject keywordscharge transfer efficiency
subject keywordsdark current
subject keywordsequilibrium full well capacity
subject keywordsgamma ray irradiation
subject keywordspinned photodiode CMOS image sensors
subject keywordspinning voltage
subject keywordspremetal dielectric positive trapped charge
subject keywordsradiation hardness
subject keywordstotal ionizing dose response
subject keywordstransfer gate design
subject keywordsActive pixel sensors
subject keywordsCMOS image sensors
subject keywordsDark cur
identifier doi10.1109/TNS.2014.2360773
journal titleNuclear Science, IEEE Transactions on
journal volume61
journal issue6
filesize2355128
citations0


Files in this item

FilesSizeFormatView

There are no files associated with this item.

This item appears in the following Collection(s)

Show simple item record