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High-frequency performance of AlGaN channel HEMTs with high breakdown voltage

contributor authorNanjo, T.
contributor authorKurahashi, K.
contributor authorImai, A.
contributor authorSuzuki, Yuya
contributor authorNakmura, M.
contributor authorSuita, M.
contributor authorYagyu, E.
date accessioned2020-03-13T00:27:23Z
date available2020-03-13T00:27:23Z
date issued2014
identifier issn0013-5194
identifier other6937254.pdf
identifier urihttps://libsearch.um.ac.ir:443/fum/handle/fum/1147424?show=full
formatgeneral
languageEnglish
publisherIET
titleHigh-frequency performance of AlGaN channel HEMTs with high breakdown voltage
typeJournal Paper
contenttypeMetadata Only
identifier padid8330377
subject keywordsIII-V semiconductors
subject keywordsaluminium compounds
subject keywordsgallium compounds
subject keywordshigh electron mobility transistors
subject keywordsmicrowave transistors
subject keywordswide band gap semiconductors
subject keywordsAlGaN
subject keywordsAlGaN channel HEMT
subject keywordsGaN
subject keywordsGaN channel layer
subject keywordsalloy disorder scattering
subject keywordsbreakdown voltage
subject keywordselectron saturation velocity
subject keywordsfrequency 7 GHz
subject keywordshigh electron mobility transistors
subject keywordssize 1 mum
identifier doi10.1049/el.2014.1874
journal titleElectronics Letters
journal volume50
journal issue22
filesize283455
citations0


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