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Ohmic Contact to n-Type Ge With Compositional W Nitride

contributor authorHuan Da Wu
contributor authorChen Wang
contributor authorJiang Bin Wei
contributor authorWei Huang
contributor authorCheng Li
contributor authorHong Kai Lai
contributor authorJun Li
contributor authorChunli Liu
contributor authorSong Yan Chen
date accessioned2020-03-13T00:27:20Z
date available2020-03-13T00:27:20Z
date issued2014
identifier issn0741-3106
identifier other6937144.pdf
identifier urihttps://libsearch.um.ac.ir:443/fum/handle/fum/1147386?show=full
formatgeneral
languageEnglish
publisherIEEE
titleOhmic Contact to n-Type Ge With Compositional W Nitride
typeJournal Paper
contenttypeMetadata Only
identifier padid8330332
subject keywordsSchottky barriers
subject keywordselectric potential
subject keywordsohmic contacts
subject keywordstungsten
subject keywordsFermi-level pinning effect
subject keywordsGe
subject keywordsOhmic contact
subject keywordsSchottky barrier height
subject keywordsW
subject keywordselectrical potential
subject keywordselectron volt energy 0.39 eV
subject keywordselectron volt energy 0.42 eV
subject keywordselectron volt energy 0.47 eV
subject keywordselectron volt energy 0.52 eV
subject keywordsfilm electrode
subject keywordsohmic contact
subject keywordsConductivity
subject keywordsFilms
subject keywordsGermanium
subject keywordsNitrogen
subject keywordsOhmic contacts
subject keywordsSchottky barriers
subject keywordsTungsten
subject keywordsFermi-level pinning
subject keywordsGermanium
subject keywordsMetal nitride
subject keywordsOhmic contact
subject keywordsSchottky barrier
subject keywordsgermanium
subject keywordsmetal nit
identifier doi10.1109/LED.2014.2365186
journal titleElectron Device Letters, IEEE
journal volume35
journal issue12
filesize1046496
citations0


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