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GaSb-InAs n-TFET With Doped Source Underlap Exhibiting Low Subthreshold Swing at Sub-10-nm Gate-Lengths

contributor authorSharma, Ashok
contributor authorGoud, Akkala Arun
contributor authorRoy, Kaushik
date accessioned2020-03-13T00:27:16Z
date available2020-03-13T00:27:16Z
date issued2014
identifier issn0741-3106
identifier other6936893.pdf
identifier urihttps://libsearch.um.ac.ir:443/fum/handle/fum/1147351?show=full
formatgeneral
languageEnglish
publisherIEEE
titleGaSb-InAs n-TFET With Doped Source Underlap Exhibiting Low Subthreshold Swing at Sub-10-nm Gate-Lengths
typeJournal Paper
contenttypeMetadata Only
identifier padid8330295
subject keywordsGreen'
subject keywordss function methods
subject keywordsIII-V semiconductors
subject keywordsMOSFET
subject keywordsPoisson equation
subject keywordsballistic transport
subject keywordsgallium compounds
subject keywordsindium compounds
subject keywordssemiconductor device models
subject keywordssemiconductor doping
subject keywordstunnelling
subject keywordsGaSb-InAs
subject keywordsPoisson quantum simulation
subject keywordsballistic tight binding
subject keywordsband diagrams
subject keywordsdoped source underlap
subject keywordsheterojuction tunnel field effect transistor
subject keywordslow subthreshold swing TFET
subject keywordsnonequilibrium Green function
subject keywordsDoping
subject keywordsDouble-gate FETs
subject keywordsMOSFET
subject keywordsSemiconductor process modeling
subject keywordsTunneling
subject keywordsDouble-gate (DG
identifier doi10.1109/LED.2014.2365413
journal titleElectron Device Letters, IEEE
journal volume35
journal issue12
filesize767799
citations0


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