Single Event Hard Errors in SRAM Under Heavy Ion Irradiation
| contributor author | Haran, Avner | |
| contributor author | Barak, Joseph | |
| contributor author | David, David | |
| contributor author | Keren, Eitan | |
| contributor author | Refaeli, Nati | |
| contributor author | Rapaport, Shimshon | |
| date accessioned | 2020-03-13T00:21:36Z | |
| date available | 2020-03-13T00:21:36Z | |
| date issued | 2014 | |
| identifier issn | 0018-9499 | |
| identifier other | 6894241.pdf | |
| identifier uri | https://libsearch.um.ac.ir:443/fum/handle/fum/1143786?show=full | |
| format | general | |
| language | English | |
| publisher | IEEE | |
| title | Single Event Hard Errors in SRAM Under Heavy Ion Irradiation | |
| type | Journal Paper | |
| contenttype | Metadata Only | |
| identifier padid | 8326426 | |
| subject keywords | SRAM chips | |
| subject keywords | ion beam effects | |
| subject keywords | SRAM | |
| subject keywords | gate oxide | |
| subject keywords | heavy ion irradiation | |
| subject keywords | microdose effect | |
| subject keywords | single-event hard errors | |
| subject keywords | static random-access memories | |
| subject keywords | Annealing | |
| subject keywords | Ions | |
| subject keywords | Logic gates | |
| subject keywords | Radiation effects | |
| subject keywords | SDRAM | |
| subject keywords | Transistors | |
| subject keywords | Angular dependence | |
| subject keywords | charge yield | |
| subject keywords | microdose | |
| subject keywords | radiation induced leakage current (RILC) | |
| subject keywords | single-event hard error (SHE) | |
| subject keywords | soft breakdown (SBD) | |
| subject keywords | stuck bits | |
| identifier doi | 10.1109/TNS.2014.2345697 | |
| journal title | Nuclear Science, IEEE Transactions on | |
| journal volume | 61 | |
| journal issue | 5 | |
| filesize | 1283214 | |
| citations | 0 |
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