Show simple item record

Enhanced Operation Characteristics in Poly-Si Nanowire Charge-Trapping Flash Memory Device With SiGe Buried Channel

contributor authorChun-Yuan Chen
contributor authorKuei-Shu Chang-Liao
contributor authorLi-Jung Liu
contributor authorWei-Chieh Chen
contributor authorTien-Ko Wang
date accessioned2020-03-13T00:21:33Z
date available2020-03-13T00:21:33Z
date issued2014
identifier issn0741-3106
identifier other6894156.pdf
identifier urihttps://libsearch.um.ac.ir:443/fum/handle/fum/1143756?show=full
formatgeneral
languageEnglish
publisherIEEE
titleEnhanced Operation Characteristics in Poly-Si Nanowire Charge-Trapping Flash Memory Device With SiGe Buried Channel
typeJournal Paper
contenttypeMetadata Only
identifier padid8326394
subject keywordsGe-Si alloys
subject keywordselemental semiconductors
subject keywordsflash memories
subject keywordsnanowires
subject keywordsrandom-access storage
subject keywordssilicon
subject keywordstunnelling
subject keywords3D nonvolatile memory application
subject keywordsCT
subject keywordsNW
subject keywordsSi-SiGe
subject keywordsburied channel
subject keywordsenhanced operation characteristics
subject keywordspolySi nanowire charge-trapping flash memory device
subject keywordspolycrystalline silicon
subject keywordsretention performances
subject keywordstunneling layer
subject keywordsAsh
subject keywordsLogic gates
subject keywordsPerformance evaluation
subject keywordsProgramming
subject keywordsSilicon germanium
subject keywordsTunneling
subject keywords3D NVM
subject keywordsSiGe buried channel
subject keywordscharge-trapping (CT) flash memory
subject keywordspoly-Si
subject keywordssiGe bur
identifier doi10.1109/LED.2014.2348714
journal titleElectron Device Letters, IEEE
journal volume35
journal issue10
filesize500891
citations0


Files in this item

FilesSizeFormatView

There are no files associated with this item.

This item appears in the following Collection(s)

Show simple item record