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Pulsed Growth Epitaxial Method of GaN-Based Light-Emitting Diodes on Patterned SiO<sub>2</sub> AlN/Sapphire Template

contributor authorYu-An Chen
contributor authorCheng-Huang Kuo
contributor authorLi-Chuan Chang
contributor authorJi-Pu Wu
date accessioned2020-03-13T00:21:33Z
date available2020-03-13T00:21:33Z
date issued2014
identifier issn0018-9197
identifier other6894153.pdf
identifier urihttps://libsearch.um.ac.ir:443/fum/handle/fum/1143753?show=full
formatgeneral
languageEnglish
publisherIEEE
titlePulsed Growth Epitaxial Method of GaN-Based Light-Emitting Diodes on Patterned SiO<sub>2</sub> AlN/Sapphire Template
typeJournal Paper
contenttypeMetadata Only
identifier padid8326391
subject keywordsIII-V semiconductors
subject keywordsgallium compounds
subject keywordslight emitting diodes
subject keywordssemiconductor epitaxial layers
subject keywordsvoids (solid)
subject keywordswide band gap semiconductors
subject keywordsGaN
subject keywordsGaN-based light-emitting diodes
subject keywordsLED
subject keywordsSiO-AlN-Al<
subject keywordssub>
subject keywords2<
subject keywords/sub>
subject keywordsO<
subject keywordssub>
subject keywords3<
subject keywords/sub>
subject keywordsair voids
subject keywordsinternal quantum efficiency
subject keywordslight extraction efficiency
subject keywordsoutput power
subject keywordspulsed growth epitaxial method
subject keywordsvoid shape
subject keywordsCrystals
subject keywordsEpitaxial growth
subject keywordsEpitaxial layers
subject keywordsGallium nitride
subject keywordsIII-V semiconductor materials
subject keywordsLight emitting diodes
subject keywordsSubstrates
identifier doi10.1109/JQE.2014.2353932
journal titleQuantum Electronics, IEEE Journal of
journal volume50
journal issue10
filesize2559617
citations0


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